MRF19030LSR3

MRF19030LSR3

$37.12
  • Description:RF MOSFET LDMOS 26V NI400
  • Series:-

SKU:32db36698722 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V NI400
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.96GHz
  • Gain:13dB
  • Voltage - Test:26 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:30W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-400S
  • Supplier Device Package:NI-400S
  • Configuration:-

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MRF19030LSR3

Overview

The MRF19030LSR3 is an N-channel enhancement-mode lateral MOSFET designed for PCN and PCS base station applications operating between 1800 MHz and 2000 MHz. It features a NI-400S package with internal input and output matching networks. At 1960 MHz with a 26 Vdc drain supply, the device delivers 30 W PEP output power with 13 dB gain and 36% drain efficiency at a 300 mA quiescent current. The component supports CDMA, TDMA, FM, and multicarrier amplifier configurations.

Feature Summary

  • Internally matched for ease of use
  • High gain, high efficiency and high linearity
  • Integrated ESD protection
  • Designed for maximum gain and insertion phase flatness

Applications

  • PCN and PCS base station applications
  • FM, TDMA, CDMA and multicarrier amplifier applications

Procurement Notes

Verify the specific ordering suffix to confirm the tape and reel packaging configuration. Confirm that the NI-400S package variant matches the required thermal and mechanical constraints for the target application. Ensure compatibility with existing design specifications before procurement.

Selection Notes

Select this component for broadband RF power amplification in cellular infrastructure. The integrated matching network simplifies circuit design by eliminating external components. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and total device dissipation limits under continuous wave operation.

Part Context

This part belongs to the MRF19030 series of RF power field-effect transistors manufactured by Freescale Semiconductor (now NXP). The series includes variants such as the MRF19030LR3, which utilizes the NI-400 package. These devices are engineered specifically for high-performance linear amplification in wireless communication systems.

Replacement Considerations

MRF19030LR3

FAQ

What is the maximum drain-source voltage rating?

The maximum drain-source voltage (VDSS) rating is +65 Vdc.

Does the MRF19030LSR3 include external matching components?

Yes, the device is internally matched both on the input and output sides.

What is the typical third-order intermodulation distortion performance?

At 1960 MHz with 30 W PEP output, the typical third-order IMD is -31 dBc.

MRF19030LSR3MRF19030LSR3
$37.12
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