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The MRF19030LSR3 is an N-channel enhancement-mode lateral MOSFET designed for PCN and PCS base station applications operating between 1800 MHz and 2000 MHz. It features a NI-400S package with internal input and output matching networks. At 1960 MHz with a 26 Vdc drain supply, the device delivers 30 W PEP output power with 13 dB gain and 36% drain efficiency at a 300 mA quiescent current. The component supports CDMA, TDMA, FM, and multicarrier amplifier configurations.
Verify the specific ordering suffix to confirm the tape and reel packaging configuration. Confirm that the NI-400S package variant matches the required thermal and mechanical constraints for the target application. Ensure compatibility with existing design specifications before procurement.
Select this component for broadband RF power amplification in cellular infrastructure. The integrated matching network simplifies circuit design by eliminating external components. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance and total device dissipation limits under continuous wave operation.
This part belongs to the MRF19030 series of RF power field-effect transistors manufactured by Freescale Semiconductor (now NXP). The series includes variants such as the MRF19030LR3, which utilizes the NI-400 package. These devices are engineered specifically for high-performance linear amplification in wireless communication systems.
MRF19030LR3
The maximum drain-source voltage (VDSS) rating is +65 Vdc.
Yes, the device is internally matched both on the input and output sides.
At 1960 MHz with 30 W PEP output, the typical third-order IMD is -31 dBc.