MRF19085LR3

Overview

The MRF19085LR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA base station applications operating between 1920 and 1980 MHz. It delivers 18 Watts of output power at 28 Volts with a typical gain of 13 dB. The device features internal matching for ease of use, high efficiency, and linearity. It includes integrated ESD protection and is characterized using series equivalent large-signal impedance parameters. The component is RoHS compliant and supplied in tape and reel packaging.

Feature Summary

• Internally matched for simplified circuit integration
• High gain, efficiency, and linearity performance
• Integrated electrostatic discharge (ESD) protection
• Designed for maximum gain and insertion phase flatness

Applications

• W-CDMA base station amplifiers
• TDMA amplifier applications
• CDMA amplifier applications
• Multicarrier amplifier designs

Procurement Notes

Verify the specific suffix against official documentation to confirm package and lead plating variations. Confirm RoHS compliance status through current manufacturer declarations. Ensure compatibility with existing thermal management solutions due to lateral MOSFET construction requirements. Validate that the internal matching network aligns with the target system impedance without external components.

Selection Notes

Select this component for wideband RF power amplification where internal matching reduces design complexity. Consider its thermal stability and phase flatness characteristics for multicarrier signal integrity. Evaluate the 28V supply requirement and ensure adequate heat sinking for continuous wave operation within the specified frequency band.

Part Context

This part belongs to the MRF19 series of RF power lateral MOSFETs from Freescale Semiconductor. These devices are engineered specifically for cellular infrastructure, offering a balance of power density and linearity. The series supports various wireless standards requiring robust performance in base station transmitter chains.

FAQ

What is the primary design advantage of the internal matching?

Internal matching simplifies the RF circuit design by eliminating the need for external input and output matching networks, reducing board space and component count.

Is the MRF19085LR3 suitable for multicarrier applications?

Yes, it is explicitly designed for multicarrier amplifier applications, offering high linearity and phase flatness necessary for complex modulation schemes.

How is the device protected against static electricity?

The MRF19085LR3 features integrated electrostatic discharge (ESD) protection to safeguard the gate structure during handling and assembly.