MRF21010LR1

MRF21010LR1

$36.30
  • Description:RF MOSFET LDMOS 28V NI360
  • Series:-

SKU:777dc7171c2e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI360
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2.17GHz
  • Gain:13.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:10W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:NI-360
  • Supplier Device Package:NI-360
  • Configuration:-

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MRF21010LR1

Overview

The MRF21010LR1 is an N-channel enhancement-mode LDMOS RF power transistor manufactured by Freescale Semiconductor. It operates within the S-band, specifically designed for frequencies from 2110 to 2170 MHz. The device features a 28V drain-source voltage rating and delivers 10W of output power with a gain of 13.5dB. Packaged in the NI-360 housing, it supports continuous drain current of 100mA. This component is suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.

Feature Summary

  • N-channel enhancement-mode lateral MOSFET technology
  • Designed for W-CDMA base station applications
  • Suitable for FM, TDMA, CDMA and multicarrier amplifier applications

Applications

  • W-CDMA base station amplifiers
  • FM transmitter stages
  • TDMA signal processing
  • CDMA communication systems
  • Multicarrier amplifier modules

Procurement Notes

Verify the specific suffix 'LR1' against the official datasheet to ensure correct package type and electrical characteristics. Confirm RoHS compliance status and manufacturing origin, as supply chain sources may vary. Check for obsolescence notices or lifecycle changes from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component for S-band applications requiring 10W output power at 2110-2170 MHz. Ensure the system design accommodates the 28V operating voltage and NI-360 package thermal requirements. Compare performance metrics against newer iterations like the MRF21010LSR1 if higher reliability or updated specifications are needed.

Part Context

The MRF21010LR1 belongs to the MRF210xx series of RF power field-effect transistors. It is part of a family of LDMOS devices optimized for cellular infrastructure. Related parts include the MRF21010L and MRF21010LSR1, which share similar architectural foundations but may differ in packaging or specific frequency tuning.

Replacement Considerations

The MRF21010LSR1 is a documented variant within the same product line. Verify pinout compatibility and thermal resistance differences when substituting. Ensure the replacement meets the original 28V and 10W specifications for the target application.

MRF21010LR1MRF21010LR1
$36.30
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