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The MRF21010LR1 is an N-channel enhancement-mode LDMOS RF power transistor manufactured by Freescale Semiconductor. It operates within the S-band, specifically designed for frequencies from 2110 to 2170 MHz. The device features a 28V drain-source voltage rating and delivers 10W of output power with a gain of 13.5dB. Packaged in the NI-360 housing, it supports continuous drain current of 100mA. This component is suitable for FM, TDMA, CDMA, and multicarrier amplifier applications.
Verify the specific suffix 'LR1' against the official datasheet to ensure correct package type and electrical characteristics. Confirm RoHS compliance status and manufacturing origin, as supply chain sources may vary. Check for obsolescence notices or lifecycle changes from the manufacturer before finalizing procurement plans.
Select this component for S-band applications requiring 10W output power at 2110-2170 MHz. Ensure the system design accommodates the 28V operating voltage and NI-360 package thermal requirements. Compare performance metrics against newer iterations like the MRF21010LSR1 if higher reliability or updated specifications are needed.
The MRF21010LR1 belongs to the MRF210xx series of RF power field-effect transistors. It is part of a family of LDMOS devices optimized for cellular infrastructure. Related parts include the MRF21010L and MRF21010LSR1, which share similar architectural foundations but may differ in packaging or specific frequency tuning.
The MRF21010LSR1 is a documented variant within the same product line. Verify pinout compatibility and thermal resistance differences when substituting. Ensure the replacement meets the original 28V and 10W specifications for the target application.