MRF21010LSR1

MRF21010LSR1

$35.41
  • Description:RF MOSFET LDMOS 28V NI360
  • Series:-

SKU:e0da530acdfd Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI360
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.17GHz
  • Gain:13.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:100 mA
  • Power - Output:10W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-360S
  • Supplier Device Package:NI-360S
  • Configuration:-

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MRF21010LSR1

Overview

The MRF21010LSR1 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications in the 2110 to 2170 MHz frequency range. It operates at a drain-source voltage of 28 Vdc and delivers 10 W PEP output power with 13.5 dB gain and 35% efficiency. The device handles 10:1 VSWR, features integrated ESD protection, and utilizes a CASE 360C-05 package.

Feature Summary

  • High gain, high efficiency, and high linearity
  • Integrated ESD protection
  • Designed for maximum gain and insertion phase flatness
  • Excellent thermal stability

Applications

  • W-CDMA base stations
  • PCN/PCS/cellular radio amplifiers
  • Wireless Local Loop (WLL) applications
  • FM, TDMA, CDMA, and multicarrier amplifier applications

Procurement Notes

Verify the specific ordering suffix 'LSR1' against official documentation to confirm the tape and reel packaging configuration and lead plating specifications. Ensure compatibility with the required CASE 360C-05 footprint during procurement planning.

Selection Notes

Select this component for broadband RF power amplification requiring high linearity and thermal stability. Validate impedance matching networks using the provided series equivalent large-signal impedance parameters for optimal performance within the specified frequency band.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors family, specifically lateral N-channel enhancement-mode MOSFETs. It is engineered for robust performance in demanding wireless communication environments.

Replacement Considerations

The MRF21010LR1 is a verified substitute offering identical electrical characteristics but differs in packaging format.

FAQ

What does the 'L' suffix indicate regarding the leads?

The 'L' suffix indicates a nominal gold plating thickness of 40µ" on the leads.

What is the maximum Drain-Source Voltage rating?

The maximum Drain-Source Voltage (VDSS) rating is +65 Vdc.

How is the device packaged?

The MRF21010LSR1 is packaged in the CASE 360C-05 style package.

MRF21010LSR1MRF21010LSR1
$35.41
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