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The MRF21010LSR1 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications in the 2110 to 2170 MHz frequency range. It operates at a drain-source voltage of 28 Vdc and delivers 10 W PEP output power with 13.5 dB gain and 35% efficiency. The device handles 10:1 VSWR, features integrated ESD protection, and utilizes a CASE 360C-05 package.
Verify the specific ordering suffix 'LSR1' against official documentation to confirm the tape and reel packaging configuration and lead plating specifications. Ensure compatibility with the required CASE 360C-05 footprint during procurement planning.
Select this component for broadband RF power amplification requiring high linearity and thermal stability. Validate impedance matching networks using the provided series equivalent large-signal impedance parameters for optimal performance within the specified frequency band.
This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors family, specifically lateral N-channel enhancement-mode MOSFETs. It is engineered for robust performance in demanding wireless communication environments.
The MRF21010LR1 is a verified substitute offering identical electrical characteristics but differs in packaging format.
The 'L' suffix indicates a nominal gold plating thickness of 40µ" on the leads.
The maximum Drain-Source Voltage (VDSS) rating is +65 Vdc.
The MRF21010LSR1 is packaged in the CASE 360C-05 style package.