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The MRF21060R3 is an N-channel Lateral Diffused Metal Oxide Semiconductor (LDMOS) radio frequency power field effect transistor manufactured by Freescale Semiconductor. Designed for base station applications, it operates within the 2100 to 2200 MHz frequency range. The device features a 28 V drain voltage rating and delivers 60 W of output power. It utilizes the NI-780 package configuration.
Verify component authenticity through authorized distribution channels. Confirm datasheet revision and package marking alignment with official Freescale Semiconductor documentation. Ensure storage conditions comply with moisture sensitivity level requirements prior to assembly. Cross-reference ordering suffixes to confirm specific tape and reel or bulk packaging configurations as required by manufacturing processes.
Select this component for designs requiring 60 W output power at 2100–2200 MHz. Evaluate thermal management capabilities due to high power dissipation characteristics. Ensure biasing circuits support the 28 V operating voltage. Verify impedance matching networks align with the device's input and output impedances for optimal gain and efficiency performance in the target application band.
This part belongs to the MRF210xx series of RF power transistors designed for wireless communication infrastructure. The series provides scalable power solutions for various cellular bands. The MRF21060R3 specifically targets the 2.1 GHz spectrum, offering a balance of power output and linearity suitable for modern digital modulation schemes used in mobile network base stations.
Consult official substitution guides for equivalent parts within the MRF210xx family. Verify pinout compatibility and electrical parameter overlaps before implementation.