MRF21060R3

MRF21060R3

$34.86
  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-

SKU:e1082afcb9d4 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2.1GHz ~ 2.2GHz
  • Gain:12.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):6µA
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:60W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-957A
  • Supplier Device Package:NI-780H-2L
  • Configuration:-

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MRF21060R3

Overview

The MRF21060R3 is an N-channel Lateral Diffused Metal Oxide Semiconductor (LDMOS) radio frequency power field effect transistor manufactured by Freescale Semiconductor. Designed for base station applications, it operates within the 2100 to 2200 MHz frequency range. The device features a 28 V drain voltage rating and delivers 60 W of output power. It utilizes the NI-780 package configuration.

Feature Summary

  • N-channel LDMOS construction optimized for RF power amplification
  • Engineered for high-efficiency operation in cellular base station environments
  • Capable of supporting multiple modulation standards including W-CDMA and GSM

Applications

  • W-CDMA base station power amplification
  • PCN and PCS base station transmitter stages
  • Multicarrier amplifier applications in cellular infrastructure

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm datasheet revision and package marking alignment with official Freescale Semiconductor documentation. Ensure storage conditions comply with moisture sensitivity level requirements prior to assembly. Cross-reference ordering suffixes to confirm specific tape and reel or bulk packaging configurations as required by manufacturing processes.

Selection Notes

Select this component for designs requiring 60 W output power at 2100–2200 MHz. Evaluate thermal management capabilities due to high power dissipation characteristics. Ensure biasing circuits support the 28 V operating voltage. Verify impedance matching networks align with the device's input and output impedances for optimal gain and efficiency performance in the target application band.

Part Context

This part belongs to the MRF210xx series of RF power transistors designed for wireless communication infrastructure. The series provides scalable power solutions for various cellular bands. The MRF21060R3 specifically targets the 2.1 GHz spectrum, offering a balance of power output and linearity suitable for modern digital modulation schemes used in mobile network base stations.

Replacement Considerations

Consult official substitution guides for equivalent parts within the MRF210xx family. Verify pinout compatibility and electrical parameter overlaps before implementation.

MRF21060R3MRF21060R3
$34.86
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