MRF21125R3

Overview

The MRF21125R3 is an N-Channel Enhancement-Mode Lateral MOSFET RF power transistor manufactured by Freescale Semiconductor. Designed for W-CDMA base station applications, it operates within the frequency range of 2110 to 2170 MHz. The device is suitable for TDMA, CDMA, and multicarrier amplifier applications, typically utilized in Class AB configurations for PCS/cellular radio and wireless local loop systems.

Feature Summary

• Internally matched for ease of use
• High gain, high efficiency and high linearity
• Integrated ESD protection
• Designed for maximum gain and insertion phase flatness

Applications

• W-CDMA base station applications
• TDMA, CDMA and multicarrier amplifier applications
• PCS/cellular radio applications
• Wireless Local Loop (WLL) applications

Procurement Notes

Verify the manufacturer origin as Freescale Semiconductor or its successors, noting that Motorola and Freescale entities have undergone corporate restructuring. Confirm the R3 suffix indicates tape and reel packaging containing 250 units per 56 mm, 13 inch reel. Ensure RoHS compliance and check for low gold plating thickness on leads if indicated by specific lot codes.

Selection Notes

Select this component for designs requiring operation between 2110 and 2170 MHz with high linearity and efficiency. It is appropriate for Class AB amplification in cellular infrastructure. Consider thermal stability and large-signal impedance parameters during circuit design. Verify compatibility with required VSWR handling capabilities at the target operating voltage.

Part Context

This part belongs to the family of RF Power Field Effect Transistors designed for wireless communication infrastructure. These lateral MOSFETs are characterized by series equivalent large-signal impedance parameters. The product line supports multicarrier amplifier requirements common in modern cellular base stations.

Replacement Considerations

Public confirmed substitute part numbers include MRF21085LR3 and MRF21085LSR3.