MRF24300NR3

Overview

The MRF24300NR3 is a silicon RF power LDMOS transistor manufactured by NXP Semiconductors, designed for high-power applications at 2.45 GHz. It delivers 300 W of continuous wave output power with a gain of 13.1 dB when operated at 32 V. The device features a breakdown voltage (Vds) of 65 V and a maximum gate-source voltage range of -6 V to +10 V. It operates within a temperature range of -40°C to +150°C and dissipates up to 833 W of power. Packaged in the OM-780-2L surface-mount format, this single-channel N-Channel MOSFET is currently discontinued.

Feature Summary

• High-output power capability delivering 300 W CW at 2.45 GHz
• Robust thermal performance supporting operation up to +150°C junction temperature
• Integrated LDMOS technology optimized for RF power amplification
• Surface-mount package design facilitating automated assembly

Applications

• Wireless communication base station power amplifiers
• Industrial, Scientific, and Medical (ISM) band equipment
• Satellite communication ground stations
• Radar systems operating in the 2.4 GHz range

Procurement Notes

This component is officially listed as End-of-Life or Discontinued by NXP Semiconductors. Availability is restricted to existing stock or secondary market sources. Verify authenticity through authorized distributors and request Certificate of Analysis. Ensure compliance with RoHS directives and check for lead-free soldering specifications before integration into new designs.

Selection Notes

Engineers should evaluate alternative components from the same family or newer generations due to the discontinuation status. Consider devices with similar power ratings and frequency ranges that remain in active production. Assess thermal management requirements carefully, as the OM-780-2L package demands specific PCB layout guidelines for heat dissipation to maintain reliability under high-power conditions.

Part Context

The MRF24300 belongs to NXP's MRF series of RF power transistors, specifically engineered for broadband and narrowband applications. This series utilizes lateral double-diffused MOS (LDMOS) technology to provide high linearity and efficiency. The NR3 suffix typically denotes reel packaging, distinguishing it from cut-tape or tray variants within the same electrical specification profile.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Users must consult NXP technical support for current obsolescence management plans or recommended cross-reference devices suitable for 300 W, 2.45 GHz applications.