MRF24301HR5

Overview

The MRF24301HR5 is a Next-generation 2.45 GHz LDMOS RF power transistor manufactured by NXP Semiconductors. It operates within the 2400–2500 MHz frequency range and utilizes a 32 V supply voltage. The device delivers a continuous wave (CW) output power of 300 W, enabling higher gain and efficiency compared to previous technologies. It is housed in a compact NI-780 package designed for base station applications.

Feature Summary

• Next-generation 2.45 GHz LDMOS technology
• High output power capability of 300 W CW
• Enhanced gain and efficiency performance

Applications

• Base station power amplifiers
• Wireless communication systems operating at 2.4 GHz
• Broadband RF transmission modules

Procurement Notes

Verify component authenticity through authorized NXP channels due to potential availability variations. Confirm that the NI-780 package matches your thermal management requirements. Check for specific datasheet revisions to ensure compatibility with current design specifications before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring high power density at 2.45 GHz. Ensure the circuit layout supports the NI-780 footprint and handles the thermal load associated with 300 W CW operation. Verify that the 32 V biasing network aligns with system power constraints and signal integrity requirements for optimal performance.

Part Context

This part belongs to the MRF24301H series, representing an evolution in LDMOS technology for the 2.4 GHz band. It succeeds earlier generations by offering improved linearity and efficiency, making it suitable for modern wireless infrastructure where space and thermal constraints are critical factors in amplifier design.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Consult NXP technical support or authorized distributors for direct replacements or pin-compatible alternatives if this specific variant is unavailable.