MRF24G300HR5

Overview

The MRF24G300HR5 is a GaN RF power transistor designed for operation within the 2400 MHz to 2500 MHz frequency range. It delivers 300 W of continuous wave output power at a 50 V supply voltage. The device utilizes the CFM4F package and is RoHS compliant. This component is currently classified as End of Life.

Feature Summary

• Utilizes Gallium Nitride technology for high power density
• Provides broadband performance across the 2.4 GHz ISM band
• Designed for high efficiency in RF power amplification

Applications

• Wireless communication infrastructure
• Industrial, Scientific, and Medical (ISM) equipment
• Point-to-point microwave radio links

Procurement Notes

This part number is officially designated as End of Life by NXP Semiconductors. Verification of current availability requires checking authorized distributors for remaining stock or obsolete inventory. Do not assume standard manufacturing lead times apply. Confirm specific lot codes and testing certificates if sourcing from secondary markets.

Selection Notes

Engineers should evaluate alternative active components from the same family or newer generations due to the discontinued status. Ensure replacement parts match the required 300 W CW specification and 50 V operating voltage. Verify that the new selection supports the 2400-2500 MHz bandwidth and compatible packaging constraints.

Part Context

The MRF24G300HR5 belongs to the MRF24G300 series of RF power transistors. These devices are engineered for demanding applications requiring high linearity and power output in the 2.4 GHz spectrum. The 'R5' suffix typically denotes a reel packaging format for surface-mount assembly.