ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：RF MOSFET GAN 48V NI780
- Series：-
- Mfr：NXP USA Inc.
- Package：Bulk
- Technology：GaN
- Frequency：2.4GHz ~ 2.5GHz
- Gain：15.3dB
- Voltage - Test：48 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
- Power - Output：336W
- Voltage - Rated：125 V
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Package / Case：NI-780S-4L
- Supplier Device Package：NI-780S-4L
- Configuration：-
Download product information
Overview
The MRF24G300HS-2STG is a 300 W CW GaN transistor designed for industrial, scientific and medical (ISM) applications at 2450 MHz. It operates in the 2400 to 2500 MHz band with a 48 V DC drain supply and -5 V gate bias. The device delivers up to 336 W output power with 70.4% drain efficiency at 2400 MHz. It features advanced GaN on SiC technology, supports single-ended or push-pull configurations, and includes input matching for simplified circuitry.
Feature Summary
- Advanced GaN on SiC construction for optimal thermal performance
- Characterized for CW, long pulse and short pulse operations
- Suitable for linear applications including CW, pulse and cycling modes
- Input matched for simplified input circuitry design
Applications
- Industrial heating
- Welding and heat sealing
- Plasma generation
- Lighting
- Scientific instrumentation
- Medical microwave ablation
- Medical diathermy
Procurement Notes
Verify the exact ordering suffix against the official NXP datasheet to confirm package type and reel specifications. Ensure compatibility with the NI-780S-4L or NI-780H-4L packages as defined in the manufacturer's documentation. Confirm RoHS compliance and material declarations prior to procurement.
Selection Notes
Select this component for high-power ISM band applications requiring robust thermal management. Validate that the operating frequency remains within the guaranteed 2400 to 2500 MHz range. Ensure the design accommodates the required 48 V drain voltage and -5 V gate bias sequence to prevent device damage.
Part Context
This part belongs to the MRF24G300 series of wideband RF power GaN transistors from NXP Semiconductors. It is characterized specifically for the 2400–2500 MHz ISM band. The device is available in air cavity packages suitable for high-power density applications.
Replacement Considerations
No public confirmed substitute part numbers are documented for this specific model.
FAQ
What is the maximum channel temperature rating?
The maximum channel temperature (TCH) is rated at 350 °C.
Can the device be used in a push-pull configuration?
Yes, the device can be used in either a single-ended or push-pull configuration.
What is the recommended biasing sequence for turning the device ON?
Set VGS to -5 V, turn on VDS to nominal supply voltage (48 V), increase VGS for Class AB operation, then apply RF input power.
