MRF24G300HS-2UP

Overview

The MRF24G300HS-2UP is a reference circuit board designed for evaluating the NXP MRF24G300HS RF power GaN transistor. The board operates within the 2400 to 2500 MHz frequency band and utilizes a 48 V DC drain supply voltage with a -5 V DC gate bias. It provides an output power of approximately 332 W at 2450 MHz, achieving a power gain of 15.2 dB and a drain efficiency of 73.0%. The physical dimensions of the reference circuit are 5.0 cm by 7.0 cm.

Feature Summary

• Designed for industrial, scientific, and medical (ISM) applications operating in the 2400 to 2500 MHz band.
• Characterized for continuous wave, long pulse, short pulse, cycling, and linear operations.
• Utilizes advanced Gallium Nitride on Silicon Carbide technology for optimal thermal performance.
• Includes input matching network to simplify input circuitry design.

Applications

• Industrial heating
• Welding and heat sealing
• Plasma generation
• Scientific instrumentation

Procurement Notes

Verify that the specific suffix matches the required packaging configuration. Confirm the revision status of the datasheet against the current manufacturing release. Ensure compatibility with the intended test fixture requirements. Validate that the reference circuit meets the specific impedance parameters needed for the evaluation setup.

Selection Notes

Select this reference circuit when evaluating the MRF24G300HS device specifically for the 2400 to 2500 MHz ISM band. Consider the 48 V operating voltage requirement and the need for appropriate heatsinking as specified in the thermal characteristics. Verify that the application aligns with the documented CW, pulse, or linear operation modes.

Part Context

This component belongs to the MRF24G300 series of wideband RF power GaN transistors from NXP Semiconductors. The series includes variants such as the MRF24G300H and MRF24G300HSR5. These devices are engineered for high gain and high efficiency in demanding environments, supporting both single-ended and push-pull configurations.

Replacement Considerations

Public confirmed substitute part numbers: MRF24G300HS-2450

FAQ

What is the maximum channel temperature rating?

The maximum channel temperature (TCH) is rated at 350 °C.

Is the device suitable for linear applications?

Yes, the device is qualified and suitable for linear applications.

What is the recommended biasing sequence for turning the device ON?

Set VGS to -5 V, turn on VDS to the nominal supply voltage, increase VGS until desired IDS current is attained, and then apply RF input power.