MRF24G300HSR5

Overview

The MRF24G300HSR5 is a 300 W CW GaN on SiC RF power transistor designed for the 2400–2500 MHz band. It operates at a maximum drain-source voltage of 125 Vdc and an operating voltage up to 55 Vdc. In a reference circuit with VDD = 48 Vdc, Pin = 10 W, it delivers 336 W output power at 2400 MHz with 70.4% drain efficiency. At 2450 MHz, it provides 332 W output with 73.0% efficiency. The device features a CFM4F package (NI-780S-4L) and is supplied in a 50-unit reel.

Feature Summary

• Advanced GaN on SiC technology for optimal thermal performance
• Characterized for CW, long pulse, and short pulse operations
• Suitable for linear applications including single-ended or push-pull configurations
• Input matched for simplified input circuitry design

Applications

• Industrial heating
• Welding and heat sealing
• Plasma generation
• Scientific instrumentation
• Medical microwave ablation and diathermy

Procurement Notes

Verify the R5 suffix indicates a 50-unit quantity on a 32 mm tape width within a 13-inch reel. Confirm the package designation NI-780S-4L matches the required form factor. Ensure compatibility with the specified soldering profile and thermal management requirements for high-power RF deployment.

Selection Notes

Select this component for ISM band applications requiring high gain and efficiency. Validate that the operating frequency remains strictly within the 2400–2500 MHz range, as performance is not guaranteed outside these limits. Consider the 55 Vdc qualification when designing bias circuits and protection networks.

Part Context

This part belongs to NXP's RF Power GaN Transistor family, specifically engineered for industrial, scientific, and medical uses. It complements other wideband solutions by offering high power density and ruggedness suitable for demanding environments where long life and reliability are critical.

Replacement Considerations

The MRF24G300HR5 is a direct alternative differing only in tape width (56 mm vs. 32 mm). No other functional substitutes are documented.