MRF281ZR1

Overview

The MRF281ZR1 is a lateral N-channel broadband RF power MOSFET designed for cellular PCS and PCN base station applications. It operates at frequencies from 1000 to 2500 MHz with a drain-source voltage of 26 Vdc. At 1930 MHz, it delivers 4 Watts PEP output power with 11 dB gain and 30% efficiency. The device withstands 10:1 VSWR at 2000 MHz and features excellent thermal stability.

Feature Summary

• Broadband operation across the 1000 to 2500 MHz frequency range
• Excellent thermal stability characterized by large-signal impedance parameters
• Capable of handling high VSWR conditions without failure

Applications

• Digital cellular PCS base stations
• Analog cellular PCN base stations
• Commercial and industrial RF amplifier designs

Procurement Notes

Verify component authenticity through authorized channels. Confirm RoHS compliance status as indicated in official documentation. Review package specifications carefully to ensure compatibility with assembly processes. Validate electrical characteristics against current application requirements before integration.

Selection Notes

Select this component for wideband cellular infrastructure requiring stable performance at 26 volts. Ensure adequate thermal management due to specific junction temperature limits. Verify that the operating frequency falls within the specified 1000 to 2500 MHz range for optimal gain and efficiency metrics.

Part Context

This part belongs to the MRF281 series of lateral N-channel enhancement-mode MOSFETs. It was originally manufactured by Freescale Semiconductor, which later became part of NXP Semiconductors. The ZR1 suffix indicates tape and reel packaging containing 500 units per 12 mm reel.

Replacement Considerations

MRF281SR1 serves as the equivalent counterpart differing only in bulk packaging format.