MRF282SR1

Overview

The MRF282SR1 is an N-channel enhancement-mode lateral MOSFET designed for Class A and Class AB PCN and PCS base station applications up to 2600 MHz. It delivers 10 Watts PEP output power at 2000 MHz with 26 Volts bias, achieving 10.5 dB gain and 28% efficiency under two-tone conditions. Single-tone performance yields 10 Watts CW with 9.5 dB gain and 35% efficiency. The device withstands 10:1 VSWR at full rated power and operates with a maximum junction temperature of 200°C.

Feature Summary

• Excellent thermal stability
• Characterized with series equivalent large-signal impedance parameters

Applications

• PCN base station amplifiers
• PCS base station amplifiers
• FM amplifier applications
• TDMA amplifier applications
• CDMA amplifier applications
• Multicarrier amplifier applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging configuration. The R1 suffix indicates availability in tape and reel format containing 500 units per 12 mm, 7 inch reel. Confirm RoHS compliance status directly with the manufacturer or authorized distributor records prior to procurement.

Selection Notes

Select this component for broadband RF power amplifier designs operating within the 1930 to 2000 MHz frequency range. Ensure the application circuit supports the required 26 Volt DC drain supply voltage. Verify that the thermal management system can maintain the case temperature within specified limits to ensure reliable operation at the maximum rated junction temperature.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors line. It is a lateral N-channel MOSFET specifically engineered for cellular communication infrastructure. The device utilizes advanced semiconductor processes to provide high power density and robust performance in demanding wireless transmission environments.

Replacement Considerations

MRF282ZR1

FAQ

What is the maximum junction temperature rating?

The maximum operating junction temperature (TJ) is rated at 200°C.

Does the device support high VSWR conditions?

Yes, the transistor is capable of handling 10:1 VSWR at 26 Vdc, 2000 MHz, and 10 Watts CW output power.

What package style does the SR1 suffix denote?

The SR1 suffix denotes the NI-200S package (Case 458B-03) supplied in tape and reel format.