MRF282ZR1

Overview

The MRF282ZR1 is an N-channel enhancement-mode lateral MOSFET designed for PCN and PCS base station applications up to 2600 MHz. It delivers 10 W PEP output power at 2000 MHz with 10.5 dB gain and 28% efficiency under two-tone conditions. Single-tone performance yields 10 W CW with 9.5 dB gain and 35% efficiency. The device withstands a drain-source voltage of 65 V, dissipates 60 W at 25°C case temperature, and operates with a junction temperature up to 200°C. It features excellent thermal stability and handles 10:1 VSWR.

Feature Summary

• Designed for Class A and Class AB PCN and PCS base station applications
• Excellent thermal stability for reliable operation
• Characterized with series equivalent large-signal impedance parameters

Applications

• PCN base station amplifier stages
• PCS base station amplifier stages
• FM, TDMA, CDMA, and multicarrier amplifier applications

Procurement Notes

Verify the specific ordering suffix ZR1 confirms tape and reel packaging containing 500 units on a 12 mm, 7 inch reel. Confirm RoHS compliance status as documented in the official datasheet. Ensure the component matches the CASE 458C-03 package style NI-200Z. Validate that the part number corresponds to the archived Freescale Semiconductor documentation.

Selection Notes

Select this component for broadband RF power amplification in cellular infrastructure requiring high linearity and thermal robustness. The device supports frequencies up to 2600 MHz and provides stable performance under varying load conditions. Consider the 65 V drain-source rating and 60 W power dissipation capability when designing heat sinks and bias circuits for continuous wave or peak envelope power operations.

Part Context

This component belongs to the MRF282 family of RF Power Field Effect Transistors manufactured by Freescale Semiconductor. The MRF282ZR1 variant specifically utilizes the CASE 458C-03 package configuration. It is categorized as a lateral N-channel enhancement-mode MOSFET intended for wideband RF power applications in telecommunications infrastructure.

Replacement Considerations

MRF282SR1

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature (TJ) is 200 °C.

How does the device handle mismatched loads?

It is capable of handling a 10:1 Voltage Standing Wave Ratio (VSWR) at 26 Vdc and 2000 MHz with 10 Watts CW output power.

What is the typical drain efficiency for single-tone operation?

The typical drain efficiency is 40% at 2000 MHz with 10 Watts CW output power and 26 Volts supply.