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Product Detailed Parameters
- Description：RF TRANS NPN 30V 2.5GHZ 305A-01
- Series：-
- Mfr：MACOM Technology Solutions
- Package：Tray
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：30V
- Frequency - Transition：2.5GHz
- Noise Figure (dB Typ @ f)：-
- Gain：16dB
- Power - Max：1W
- DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 100mA, 10V
- Current - Collector (Ic) (Max)：150mA
- Operating Temperature：-
- Mounting Type：Chassis Mount
- Package / Case：305A-01
- Supplier Device Package：305A-01, Style 1
- Grade：-
- Qualification：-
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Overview
The MRF313 is an NPN silicon high-frequency transistor from MACOM's RF Line, designed for wideband amplifier, driver, or oscillator applications in military, mobile, and aircraft radio systems. It operates at a specified frequency of 400 MHz with a supply voltage of 28 V. Key electrical characteristics include an output power of 1.0 W, a minimum power gain of 15 dB, and a typical efficiency of 45%. The device utilizes emitter ballast and low current density to enhance mean time between failures (MTBF). It is housed in the CASE 305A–01, STYLE 1 package.
Feature Summary
- Designed for wideband amplifier, driver, or oscillator applications in military, mobile, and aircraft radio.
- Features emitter ballast and low current density for improved MTBF.
- Common emitter configuration for improved stability.
Applications
- Wideband amplifier applications
- Driver stage implementations
- Oscillator circuits
- Military radio systems
- Mobile radio equipment
- Aircraft radio systems
Procurement Notes
Verify component authenticity through authorized MACOM distributors or direct channels. Confirm datasheet revision status before integration. Ensure proper handling procedures are followed during assembly. Check for any specific environmental compliance requirements relevant to your region. Validate that the application does not involve medical or life-sustaining uses as per manufacturer restrictions.
Selection Notes
Select this component when designing wideband RF circuits requiring stable operation at 400 MHz. Consider its 1.0 W output power capability and 15 dB minimum gain for driver stages. Evaluate thermal management needs due to power dissipation. Ensure the system operates within the specified 28 V supply voltage. Verify compatibility with the CASE 305A–01 package for PCB layout.
Part Context
The MRF313 belongs to MACOM's RF Line series of NPN silicon high-frequency transistors. This series targets demanding RF applications in defense and communications sectors. It complements other MACOM components by providing reliable performance in wideband environments. The transistor is engineered for stability and longevity in critical radio systems.
Replacement Considerations
No publicly confirmed substitute part numbers are available in the provided documentation. Consult MACOM technical support for potential alternatives if this component is obsolete or unavailable. Ensure any replacement matches the electrical specifications and package type.
FAQ
What is the maximum operating frequency for the MRF313?
The MRF313 is specified for operation at 400 MHz.
Does the MRF313 include emitter ballasting?
Yes, the MRF313 features emitter ballast and low current density to improve MTBF.
Is the MRF313 suitable for medical applications?
No, MACOM products are not intended for use in medical, lifesaving, or life-sustaining applications.
