MRF317

Overview

The MRF317 is an NPN silicon RF power transistor designed for wideband large-signal output amplifier stages operating in the 30–200 MHz frequency range. It delivers 100 W of output power at 150 MHz with a minimum gain of 9.0 dB when biased at 28 Vdc. The device features a built-in matching network for broadband operation and utilizes gold metallization for high reliability. It is guaranteed to withstand load mismatch conditions with a 30:1 VSWR at all phase angles.

Feature Summary

• Built-in matching network for broadband operation
• High output saturation power suitable for peak AM amplifier service
• Guaranteed performance under severe load mismatch conditions

Applications

• Wideband large-signal output amplifier stages
• Peak AM amplifier service
• Broadband test fixtures

Procurement Notes

Verify the specific revision status and package style against current MACOM documentation before procurement. Confirm that the application environment does not exceed the specified voltage or power limits. Ensure proper thermal management is implemented given the high power dissipation requirements. Check for any recent product change notices that may affect mechanical dimensions or electrical characteristics.

Selection Notes

Select this component for applications requiring high linearity and power in the HF band. The integrated matching network simplifies circuit design compared to discrete alternatives. Consider the 30:1 VSWR tolerance when designing output networks for potentially unstable loads. Verify that the 28 Vdc supply aligns with system power constraints.

Part Context

The MRF317 belongs to MACOM's RF Line of NPN silicon power transistors. This series targets robust performance in demanding RF environments. The device represents a mature technology solution for broad frequency coverage without external matching components.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.