MRF321

$82.35

Description：RF TRANS NPN 33V 244-04
Series：-

SKU:8de6109e991d Category: Bipolar RF Transistors Brand: MACOM Technology Solutions

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 33V 244-04
Series：-
Mfr：MACOM Technology Solutions
Package：Tray
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：33V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：-
Gain：13dB
Power - Max：10W
DC Current Gain (hFE) (Min) @ Ic, Vce：20 @ 500mA, 5V
Current - Collector (Ic) (Max)：1.1A
Operating Temperature：-
Mounting Type：Chassis Mount
Package / Case：244-04
Supplier Device Package：244-04, STYLE 1
Grade：-
Qualification：-

Download product information

MRF321

Overview

The MRF321 is an NPN silicon RF power transistor designed for wideband large-signal driver and predriver amplifier stages within the 200–500 MHz frequency range. It delivers a guaranteed output power of 10 W at 400 MHz with a minimum power gain of 12 dB and efficiency of 50% when operated at 28 Vdc. The device features computer-controlled wirebonding to ensure consistent input impedance and includes gold metallization for high reliability. It undergoes 100% testing for load mismatch across all phase angles with a 30:1 VSWR.

Feature Summary

Gold metallization system for enhanced reliability
Computer-controlled wirebonding for consistent input impedance
Guaranteed performance under 30:1 VSWR load mismatch conditions

Applications

Wideband large-signal driver amplifier stages
Predriver amplifier stages in military communication equipment
High-power Class C amplifiers operating between 225 and 400 MHz

Procurement Notes

Verify the specific revision status, such as Rev. V1, against current MACOM documentation before procurement. Confirm that the application environment strictly avoids medical or life-sustaining uses, as these are explicitly excluded from warranty coverage. Ensure the design accommodates the required 28 Vdc supply and thermal management suitable for screw-mount installation.

Selection Notes

Select this component for applications requiring reliable NPN silicon performance in the 200–500 MHz band. It is specifically optimized for driver and predriver roles rather than final stage power amplification. Consider the 10 W output capability and 12 dB gain requirements when designing the signal chain. Verify compatibility with the CASE 244-04 mounting style for proper integration.

Part Context

The MRF321 belongs to the MACOM RF Line of NPN silicon power transistors. This series targets robust performance in demanding radio frequency environments. The device utilizes advanced metallization and bonding techniques to maintain stability and consistency across varying operational conditions.