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The MRF372R3 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications operating from 470 to 860 MHz. It features a 180 W PEP output power capability at 32 Vdc, with typical narrowband gain of 17 dB and efficiency of 36%. The device includes internal matching networks and ESD protection, housed in the NI-860C3 package (Case 375G-04). Maximum ratings include a drain-source voltage of 68 Vdc, continuous drain current of 17 Adc, and total device dissipation of 350 W at 25°C case temperature.
Verify the R3 suffix indicates a reel quantity of 250 units per 56 mm tape on a 13-inch reel. Confirm RoHS compliance status and check for end-of-life notifications as this component originates from Freescale Semiconductor documentation. Ensure the NI-860C3 package dimensions match your mechanical design requirements before finalizing procurement.
Select this component for applications requiring high power output within the 470 to 860 MHz frequency range. Consider the 32 Vdc operating voltage and 17 A maximum drain current when designing bias networks. Evaluate thermal management needs based on the 0.5 °C/W junction-to-case thermal resistance and 350 W total dissipation rating under specified conditions.
The MRF372R3 belongs to the MRF372 series of RF power field-effect transistors manufactured by Freescale Semiconductor. It is specifically engineered for broadband operations, offering high gain and power capabilities suitable for demanding transmitter environments. The R3 suffix denotes the specific tape and reel packaging configuration provided by the manufacturer.
Consult official datasheets for cross-reference information. Verify electrical compatibility including voltage ratings, power output, and impedance characteristics before substituting any alternative components.
The maximum drain-source voltage (VDSS) rating is +68 Vdc.
Yes, the device is internally matched for ease of use.
The typical narrowband power gain is 17 dB at f1 = 857 MHz and f2 = 863 MHz.