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The MRF372R5 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications from 470 to 860 MHz. It delivers 180 W PEP output power at 32 V with a typical narrowband gain of 17 dB and efficiency of 36%. The device features internal matching, integrated ESD protection, and excellent thermal stability. It operates in a common source configuration and is characterized by series equivalent large-signal impedance parameters.
Verify the specific R5 suffix indicates a reel quantity of 50 units per 56 mm, 13 inch reel as documented. Confirm RoHS compliance status and check current product lifecycle status, as this component may be discontinued or subject to change without notice.
Select based on required frequency range within 470-860 MHz and 32 V operating voltage. Ensure thermal management supports the specified junction temperature and total device dissipation ratings for the intended application environment.
This part belongs to the MRF372 series of RF power field-effect transistors manufactured by Freescale Semiconductor (now NXP). It utilizes LDMOS technology and is packaged in the NI-860C3 case style. The R5 suffix specifically denotes the tape and reel packaging format.
MRF372R3 is a direct substitute differing only in packaging quantity (250 units per reel). Verify compatibility with existing board layouts and thermal requirements when substituting.
The maximum Drain-Source Voltage (VDSS) is rated at +68 Vdc.
Yes, the MRF372R5 is internally matched for ease of use.
The typical narrowband power gain is 17 dB at f1 = 857 MHz and f2 = 863 MHz with 32 Volts.