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The MRF373ALSR5 is an N-channel enhancement-mode lateral MOSFET designed for broadband commercial and industrial applications operating between 470 MHz and 860 MHz. It features a drain-source breakdown voltage of 70 Vdc, gate-source voltage limits from -0.5 to +15 Vdc, and total device dissipation of 278 W at 25°C case temperature. The component delivers 75 Watts CW output power with 18.2 dB power gain and 60% efficiency at 860 MHz under 32 Volts. It utilizes the NI-360S package and includes integrated ESD protection.
Verify that the MRF373ALSR5 is marked as Not Recommended for New Design. Confirm availability through authorized distributors or secondary markets, as original production may be discontinued. Ensure compliance with RoHS standards and check for specific lead plating thickness requirements indicated by the L suffix.
Select this component for designs requiring high gain and broadband performance in the 470 to 860 MHz range. Consider the 32/32 volt operation capability and the NI-360S surface mount package. Evaluate thermal management needs based on the 278 W dissipation rating and junction-to-case thermal resistance.
This part belongs to the MRF373A family of RF Power Field Effect Transistors originally manufactured by Freescale Semiconductor. The SR5 suffix typically denotes specific tape and reel packaging configurations for automated assembly processes within the broader NI-360S product line.
Consult official documentation for direct substitutes. Verify pinout compatibility and electrical specifications against alternative LDMOS devices if sourcing from different manufacturers due to the obsolete status.