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The MRF392 is a dual RF power transistor designed for wideband large-signal output and driver amplifier stages operating between 30 MHz and 500 MHz. It integrates two transistors in a single package with separate base and collector leads and common emitters, facilitating push-pull configurations. Specified at 28 V and 400 MHz, the device delivers an output power of 125 W with typical gain of 10 dB and efficiency of 55%. Built-in input impedance matching networks support broadband operation, while gold metallization ensures high reliability.
Verify component authenticity through authorized MACOM distributors or official channels. Confirm datasheet revision status (Rev. V1) matches design requirements. Ensure handling procedures align with ESD protection standards for RF power devices. Validate thermal management solutions for continuous operation at rated power levels.
Select this component for designs requiring integrated matching networks to simplify circuit layout. The push-pull capability is suitable for applications needing reduced even-order harmonics. Verify that the 30-500 MHz operational range covers the target frequency spectrum. Consider the 28 V supply requirement and thermal dissipation needs for the specific enclosure.
The MRF392 belongs to MACOM's RF Line Controlled Q Broadband Power Transistor series. It utilizes a CASE 744A-01 package style. The device is manufactured by M/A-COM Technology Solutions Inc., which reserves rights to modify product specifications without notice.
No public substitute part numbers are documented in the provided source material. Consult MACOM technical support for potential alternatives if discontinuation occurs.
The MRF392 is specified for an output power of 125 W at 28 V and 400 MHz.
It contains two transistors in one package with separate base and collector leads, allowing for space-saving push-pull configurations.
No, it features built-in input impedance matching networks designed for broadband operation.