MRF559G

Overview

The MRF559G is an NPN silicon RF bipolar transistor designed for wideband large signal stages in the UHF frequency range. It operates within a collector-emitter voltage of 16 Vdc and supports a maximum collector current of 150 mA. The device delivers 0.5 W output power with a minimum gain of 8.0 dB at 870 MHz under 12.5 Vdc bias, achieving 50% efficiency. At 512 MHz, it provides 13 dB gain with 60% efficiency. The component utilizes a Macro X package with electroless tin-plated leads.

Feature Summary

• Optimized for wideband large signal applications in the UHF spectrum
• Utilizes cost-effective Macro X plastic package construction
• Features electroless tin-plated leads to enhance solderability

Applications

• UHF wideband power amplifier stages
• General purpose RF amplification circuits
• Low power PA configurations

Procurement Notes

Verify the RoHS compliance status and lead finish specifications against the latest manufacturer documentation before procurement. Confirm that the Macro X package dimensions align with the target PCB footprint requirements. Ensure thermal management strategies accommodate the specified total device dissipation limits during operation.

Selection Notes

Select this component for UHF applications requiring moderate output power and high linearity. Evaluate the trade-off between gain and efficiency based on the specific operating frequency and bias voltage. Consider the thermal resistance characteristics when designing the heat dissipation path for continuous wave operations.

Part Context

The MRF559G belongs to the MRF559 series of RF & Microwave discrete low power transistors manufactured by Advanced Power Technology. This series includes variants such as the MRF559T and other devices like the MRF557 and MRF581, all targeting similar UHF frequency ranges with varying power and gain capabilities.

Replacement Considerations

Potential substitutes include the MRF559 (non-G variant) or other devices from the same selection guide such as the MRF557 or MRF5812, provided they meet the required frequency and power specifications.