MRF581A

Overview

The MRF581A is an NPN silicon RF transistor designed for high current, low power, and low noise amplifier applications operating up to 1.0 GHz. Manufactured by Microsemi Corporation, this component utilizes a cost-effective MacroX package suitable for discrete RF and microwave circuits. Key electrical characteristics include a minimum transition frequency (Ftau) of 5.0 GHz at 10V and 75mA bias conditions. The device provides a gain of 15.5 dB at the optimum noise figure point when measured at 500 MHz, with a noise figure of 2.5 dB at the same frequency.

Feature Summary

• Engineered for low noise performance in high-frequency amplifier stages
• Capable of supporting high current operation within low power constraints
• Optimized for stable gain characteristics at optimal noise figure points

Applications

• Low noise amplifiers operating up to 1.0 GHz
• High current RF signal processing circuits
• Microwave discrete amplifier modules

Part Context

The MRF581A belongs to the family of RF and microwave discrete transistors produced by Microsemi Corporation. It is specifically categorized as a low power NPN silicon device intended for use in radio frequency applications where low noise and moderate gain are critical requirements for system performance.