MRF5P21045NR1

Overview

The MRF5P21045NR1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) RF power transistor manufactured by Freescale Semiconductor. Designed for high-frequency applications, this device operates within the frequency range of 2.11 GHz to 2.17 GHz. It delivers a typical output power of 10W with a gain of 14.5 dB. The component is rated for a drain-source voltage of 28V and features a TO-270AB surface-mount package.

Feature Summary

• N-channel enhancement-mode Lateral MOSFET construction
• Surface-mount TO-270AB package design
• Optimized for 2.11–2.17 GHz frequency bands

Applications

• RF power amplification in cellular base stations
• Broadband communication systems
• Wireless infrastructure equipment

Procurement Notes

Verify that the ordered part number matches MRF5P21045NR1 exactly. Confirm the manufacturer is Freescale Semiconductor or its successor entity. Ensure the package type is TO-270AB and check for RoHS compliance status as indicated in official documentation. Validate authenticity through authorized distribution channels.

Selection Notes

Select this component when a 10W output power at 2.11–2.17 GHz is required. The 28V rating suits specific biasing requirements. The TO-270AB package facilitates surface-mount assembly. Consider thermal management needs associated with LDMOS technology in the final design.

Part Context

This RF power transistor belongs to the MRF series of LDMOS devices from Freescale Semiconductor. These components are engineered for robust performance in wireless communication environments. The MRF5P21045NR1 specifically targets mid-power applications requiring stable gain and efficiency in the PCS/IMT bands.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing. Cross-reference with NXP Semiconductors documentation for updated part numbers if applicable.