MRF5P21180HR5

MRF5P21180HR5

$114.31
  • Description:RF MOSFET LDMOS 28V NI1230
  • Series:-

SKU:5fcaeabecca8 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI1230
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:2.16GHz
  • Gain:14dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:38W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Chassis Mount
  • Package / Case:NI-1230
  • Supplier Device Package:NI-1230
  • Configuration:-

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MRF5P21180HR5

Overview

The MRF5P21180HR6 is a dual-channel N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers 38 Watts average output power at 28 Volts with 14 dB gain and 25.5% drain efficiency. The device features internal input and output matching, integrated ESD protection, and qualified operation up to 32 Vdc. It supports Class AB amplification for PCN-PCS/cellular radio and wireless local loop systems.

Feature Summary

  • Internally matched on both input and output ports to simplify circuit design
  • Integrated electrostatic discharge (ESD) protection mechanisms
  • Qualified for continuous operation at maximum drain voltages up to 32 Vdc

Applications

  • W-CDMA base station power amplification
  • TDMA and CDMA amplifier stages
  • Multicarrier amplifier applications
  • PCN-PCS and cellular radio transmitters
  • Wireless Local Loop (WLL) systems

Procurement Notes

Verify the specific suffix 'R6' against the datasheet to confirm tape and reel packaging specifications. Ensure the ordering part number matches the exact thermal and electrical characteristics documented in the official Freescale/NXP data sheet. Confirm RoHS compliance status through official manufacturer channels prior to procurement.

Selection Notes

Select this component for high-power RF applications requiring linear amplification in the S-band spectrum. The internal matching networks reduce external component count and layout complexity. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under continuous wave and pulsed conditions.

Part Context

This device belongs to the MRF5P series of RF power lateral MOSFETs manufactured by Freescale Semiconductor, now NXP Semiconductors. It utilizes a CASE 375D-05 package style designed for robust thermal dissipation and high reliability in demanding telecommunications infrastructure environments.

Replacement Considerations

Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing specific electrical parameter differences.

MRF5P21180HR5MRF5P21180HR5
$114.31
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