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The MRF5P21180HR6 is a dual-channel N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers 38 Watts average output power at 28 Volts with 14 dB gain and 25.5% drain efficiency. The device features internal input and output matching, integrated ESD protection, and qualified operation up to 32 Vdc. It supports Class AB amplification for PCN-PCS/cellular radio and wireless local loop systems.
Verify the specific suffix 'R6' against the datasheet to confirm tape and reel packaging specifications. Ensure the ordering part number matches the exact thermal and electrical characteristics documented in the official Freescale/NXP data sheet. Confirm RoHS compliance status through official manufacturer channels prior to procurement.
Select this component for high-power RF applications requiring linear amplification in the S-band spectrum. The internal matching networks reduce external component count and layout complexity. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values under continuous wave and pulsed conditions.
This device belongs to the MRF5P series of RF power lateral MOSFETs manufactured by Freescale Semiconductor, now NXP Semiconductors. It utilizes a CASE 375D-05 package style designed for robust thermal dissipation and high reliability in demanding telecommunications infrastructure environments.
Consult official manufacturer documentation for verified substitute part numbers. Do not assume functional equivalence with other models without reviewing specific electrical parameter differences.