MRF5S19060MBR1

Overview

The MRF5S19060MBR1 is an N-channel enhancement-mode lateral MOSFET designed for L-band RF power applications. It operates within the 1930 to 1990 MHz frequency range and features a minimum drain-source breakdown voltage of 68 V. The device utilizes a TO-272-4 package configuration, providing a robust solution for high-frequency amplification tasks in cellular infrastructure.

Feature Summary

• N-channel enhancement-mode lateral MOSFET technology
• Optimized for L-band frequencies up to 1990 MHz
• Integrated ESD protection mechanisms

Applications

• N-CDMA base station amplifier stages
• TDMA and CDMA multicarrier amplifier applications
• PCS/cellular radio final output stages

Procurement Notes

Verify the specific suffix 'MBR1' against official manufacturer documentation to confirm tape-and-reel packaging specifications and lead-free termination status. Ensure compatibility with existing thermal management designs for the TO-272-4 package before integration into production systems.

Selection Notes

Select this component for L-band cellular base station designs requiring reliable RF power amplification. Consider the 68 V breakdown rating and TO-272-4 form factor when evaluating thermal constraints and circuit board layout requirements for high-frequency signal integrity.

Part Context

This part belongs to the MRF5S series of RF power transistors from Freescale Semiconductor (now NXP). These devices are engineered specifically for wireless communication infrastructure, offering high gain and broadband performance suitable for demanding commercial and industrial RF environments.

Replacement Considerations

Consult official substitution guides for equivalent N-channel L-band MOSFETs. Verify pinout compatibility and electrical parameter alignment with alternative suppliers before implementing any cross-brand replacements.