MRF5S21045NBR1

Overview

The MRF5S21045NBR1 is an RF power LDMOS transistor manufactured by Freescale Semiconductor. It operates at a drain voltage of 28 V and delivers 45 W of output power at 2.14 GHz. The device features a gain of 13 dB and utilizes an NI-400 package.

Feature Summary

• Lateral Double-Diffused MOS (LDMOS) technology for high linearity
• Designed for broadband RF applications in the UHF band
• Enhanced-mode operation suitable for commercial and industrial use

Applications

• Broadband RF power amplification
• Commercial broadcast transmitters
• Industrial heating and plasma generation

Procurement Notes

Verify the specific datasheet revision and electrical test conditions against the manufacturer's official documentation. Confirm RoHS compliance status and packaging details directly with the supplier or authorized distributor to ensure alignment with project requirements.

Selection Notes

Select this component for applications requiring high linearity and power density in the 470 MHz to 860 MHz range. Ensure the design supports the required 28 V bias and thermal management for the NI-400 package.

Part Context

This part belongs to the MRF5S series of RF power LDMOS transistors designed for broadband coverage. It complements other devices in the family offering varying power levels for flexible system design across UHF frequencies.

Replacement Considerations

Check for direct substitutes within the MRF5S series or equivalent LDMOS parts from NXP, ensuring pin compatibility and matching electrical specifications such as Vdd and Pout.