MRF5S9070NR5

$23.05

Description：RF MOSFET LDMOS 26V TO270-2
Series：-

SKU:898b95bac940 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 26V TO270-2
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：880MHz
Gain：17.8dB
Voltage - Test：26 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：600 mA
Power - Output：14W
Voltage - Rated：68 V
Grade：-
Qualification：-
Mounting Type：Surface Mount
Package / Case：TO-270AA
Supplier Device Package：TO-270-2
Configuration：-

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MRF5S9070NR5

Overview

The MRF5S9070NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 68 Vdc with a maximum total device dissipation of 219 W at 25°C case temperature. The device delivers 70 W output power capability, characterized by high gain and broadband performance suitable for large-signal common-source amplifier applications in 26 V base station equipment.

Feature Summary

Characterized with series equivalent large-signal impedance parameters
Integrated ESD protection
Capable of handling 10:1 VSWR

Applications

Broadband commercial applications
Industrial applications
Large-signal common-source amplifier applications in 26 V base station equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The R1 suffix indicates tape and reel packaging containing 500 units on a 24 mm, 13-inch reel. Confirm RoHS compliance status and lead-free termination availability through authorized distributors or manufacturer channels prior to procurement.

Selection Notes

Select this component for designs requiring broadband RF power amplification up to 1000 MHz. Ensure the application supports a 26 V supply voltage and accommodates the required thermal management for 219 W dissipation. Validate input and output matching networks using the provided series equivalent impedance parameters for optimal performance.

Part Context

This part belongs to the Freescale Semiconductor (now NXP) RF Power Field Effect Transistor family. It is specifically engineered as a lateral MOSFET for high-power RF applications. The datasheet revision history indicates updates to package outlines and moisture sensitivity levels, reflecting ongoing manufacturing standardization.