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The MRF5S9100NR1 is an RF MOSFET utilizing LDMOS technology, designed for high-frequency applications. It operates with a test voltage of 26 V and a rated voltage of 68 V. The device delivers a typical output power of 20 W at a frequency of 880 MHz, with a gain of 19.5 dB and a test current of 950 mA. Packaged in a TO-270 WB-4 (TO-270AB) housing, it is suitable for broadband RF power amplification.
Verify the manufacturer designation, as this component originates from Freescale Semiconductor, which has undergone corporate restructuring. Confirm that the specific part number corresponds to the correct NXP or legacy Freescale inventory records. Ensure compliance with RoHS3 standards and check for any specific handling requirements associated with the TO-270 package during procurement.
Select this component when designing circuits requiring approximately 20 W of output power at 880 MHz. The 26 V operating voltage and LDMOS technology make it suitable for applications demanding high linearity and efficiency. Consider the TO-270 package for thermal management needs and ensure the driving circuitry can support the required input power for the specified 19.5 dB gain.
This device belongs to the MRF5 series of RF power transistors, specifically engineered for UHF and broadband applications. The MRF5S9100NR1 variant utilizes the TO-270WB-4 package, distinguishing it from other series members that may use different footprints like NI-780 or SOT packages. It represents a solution for mid-power RF amplification tasks in the 800-900 MHz range.
Direct substitutes within the same family include variants with different packaging suffixes such as NR5, provided the electrical characteristics remain identical. Cross-referencing with NXP documentation is recommended to identify equivalent parts from the MRF5S9100 series that match the specific thermal and pinout requirements of the existing design.