MRF5S9100NR1

MRF5S9100NR1

$35.30
  • Description:RF MOSFET LDMOS 26V TO270-4
  • Series:-

SKU:01ad18f37d48 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 26V TO270-4
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:880MHz
  • Gain:19.5dB
  • Voltage - Test:26 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:950 mA
  • Power - Output:20W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:TO-270AB
  • Supplier Device Package:TO-270 WB-4
  • Configuration:-

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MRF5S9100NR1

Overview

The MRF5S9100NR1 is an RF MOSFET utilizing LDMOS technology, designed for high-frequency applications. It operates with a test voltage of 26 V and a rated voltage of 68 V. The device delivers a typical output power of 20 W at a frequency of 880 MHz, with a gain of 19.5 dB and a test current of 950 mA. Packaged in a TO-270 WB-4 (TO-270AB) housing, it is suitable for broadband RF power amplification.

Feature Summary

  • Lateral Double-Diffused Metal-Oxide Semiconductor (LDMOS) construction for robust RF performance
  • Optimized for operation in the Ultra High Frequency band around 880 MHz
  • Designed for broadband power amplification with high gain characteristics

Applications

  • Broadband RF power amplifiers
  • Commercial broadcast transmission systems
  • Industrial RF heating and plasma generation equipment

Procurement Notes

Verify the manufacturer designation, as this component originates from Freescale Semiconductor, which has undergone corporate restructuring. Confirm that the specific part number corresponds to the correct NXP or legacy Freescale inventory records. Ensure compliance with RoHS3 standards and check for any specific handling requirements associated with the TO-270 package during procurement.

Selection Notes

Select this component when designing circuits requiring approximately 20 W of output power at 880 MHz. The 26 V operating voltage and LDMOS technology make it suitable for applications demanding high linearity and efficiency. Consider the TO-270 package for thermal management needs and ensure the driving circuitry can support the required input power for the specified 19.5 dB gain.

Part Context

This device belongs to the MRF5 series of RF power transistors, specifically engineered for UHF and broadband applications. The MRF5S9100NR1 variant utilizes the TO-270WB-4 package, distinguishing it from other series members that may use different footprints like NI-780 or SOT packages. It represents a solution for mid-power RF amplification tasks in the 800-900 MHz range.

Replacement Considerations

Direct substitutes within the same family include variants with different packaging suffixes such as NR5, provided the electrical characteristics remain identical. Cross-referencing with NXP documentation is recommended to identify equivalent parts from the MRF5S9100 series that match the specific thermal and pinout requirements of the existing design.

MRF5S9100NR1MRF5S9100NR1
$35.30
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