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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI1230
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Technology：LDMOS
- Frequency：2.66GHz
- Gain：14.6dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.8 A
- Power - Output：35W
- Voltage - Rated：68 V
- Grade：-
- Qualification：-
- Mounting Type：Chassis Mount
- Package / Case：NI-1230
- Supplier Device Package：NI-1230
- Configuration：-
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Overview
The MRF6P27160HR6 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 2600 and 2700 MHz. It delivers 35 Watts average output power at a drain voltage of 28 Volts with a quiescent current of 1800 mA. The device provides a typical power gain of 14.6 dB and a drain efficiency of 22.6%. It features internal matching, ESD protection, and qualified operation up to 32 Vdc.
Feature Summary
- Internally matched input and output networks for simplified circuit design
- Integrated electrostatic discharge (ESD) protection
- Qualified for continuous operation up to a maximum of 32 Vdc
Applications
- CDMA base station amplifiers
- WiMAX and WiBro multicarrier amplifier applications
- Wireless Local Loop (WLL) Class AB and Class C amplifiers
Procurement Notes
Verify the specific ordering suffix R6 confirms tape and reel packaging containing 150 units per 56 mm reel. Confirm RoHS compliance status and check for End-of-Life notifications or alternative part recommendations from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component for broadband RF power amplification in the 2600 to 2700 MHz range. Ensure the application supports the required 28 Vdc supply and 1800 mA quiescent current. Verify that the NI-1230 case style and base-mount installation method align with the thermal management strategy.
Part Context
This device belongs to the MRF6P series of RF power lateral MOSFETs manufactured by Freescale Semiconductor, now NXP USA Inc. It utilizes the NI-1230 package style and is engineered specifically for high-linearity requirements in cellular infrastructure.
Replacement Considerations
Consult official manufacturer documentation for verified substitute part numbers. No direct replacements are confirmed in the provided source material.
FAQ
What is the maximum drain-source voltage rating?
The absolute maximum Drain-Source Voltage (VDSS) rating is +68 Vdc.
How does the device handle mismatched loads?
The transistor is capable of handling a 10:1 Voltage Standing Wave Ratio (VSWR) at 28 Vdc and 2650 MHz with 160 Watts CW output power.
What is the specified junction temperature limit?
The maximum Operating Junction Temperature (TJ) is rated at 225 °C.
