MRF6P3300HR3

Overview

The MRF6P3300HR3 is a lateral N-channel RF power MOSFET designed for broadband commercial and industrial applications from 470 to 860 MHz. It operates at a maximum drain-source voltage of 68 Vdc, with typical functional testing conducted at 32 Vdc. The device delivers up to 300 W CW output power and handles high VSWR conditions. Key electrical characteristics include a gate threshold voltage of 1 to 3 Vdc, reverse transfer capacitance of 1.4 pF, and an operating junction temperature up to 225 °C.

Feature Summary

• Designed specifically for push-pull operation in large-signal common-source amplifier configurations.
• Internally matched on both input and output ports to simplify circuit integration.
• Features integrated ESD protection compliant with Human Body Model Class 3B standards.
• Qualified for reliable performance under maximum 32 VDD operational limits.

Applications

• Analog television transmitter equipment
• Digital television (DVB-T) transmitter equipment
• Broadband commercial RF amplifiers
• Industrial RF processing systems

Procurement Notes

Verify the specific suffix R3 against current inventory lists, as this component has been superseded by the MRFE6P3300HR3 per Device Migration PCN12895. Confirm RoHS compliance status and package integrity upon receipt. Ensure sourcing channels provide valid traceability documentation for archived Freescale Semiconductor products.

Selection Notes

Select this component when designing balanced push-pull architectures requiring wide bandwidth coverage between 470 and 860 MHz. Evaluate thermal management requirements carefully, as the device supports high junction temperatures up to 225 °C. Consider the internal matching network capabilities to reduce external component count and simplify impedance transformation networks.

Part Context

This part belongs to the MRF6P3300H series of lateral N-channel enhancement-mode MOSFETs originally manufactured by Freescale Semiconductor. The HR3 suffix indicates tape and reel packaging containing 250 units per 56 mm reel. The device utilizes the CASE 375G-04 package style.

Replacement Considerations

Public confirmed substitute: MRFE6P3300HR3/HR5. Refer to Device Migration PCN12895 for detailed transition information.

FAQ

Is the MRF6P3300HR3 suitable for single-ended amplifier designs?

No, the datasheet explicitly states that the device is designed for push-pull operation only.

What is the maximum allowable drain-source voltage for this MOSFET?

The absolute maximum rating for Drain-Source Voltage (VDSS) is +68 Vdc.

How does the internal matching affect the design process?

The device is internally matched on both input and output, which simplifies the use of the component by reducing the need for complex external matching networks.