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Product Detailed Parameters
- Description：RF MOSFET LDMOS 28V NI860C3
- Series：-
- Mfr：Freescale Semiconductor
- Package：Bulk
- Technology：LDMOS
- Frequency：880MHz
- Gain：20dB
- Voltage - Test：28 V
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：1.6 A
- Power - Output：47W
- Voltage - Rated：68 V
- Grade：-
- Qualification：-
- Mounting Type：-
- Package / Case：NI-860C3
- Supplier Device Package：NI-860C3
- Configuration：-
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Overview
The MRF6P9220HR5 is an N-Channel Enhancement-Mode Lateral MOSFET RF power transistor designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 68 Vdc with a maximum junction temperature of 225 °C. In typical single-carrier N-CDMA performance at 880 MHz, it delivers 47 Watts average output power with 20 dB power gain and 30% drain efficiency. The device features integrated ESD protection and is internally matched for ease of use.
Feature Summary
- Designed specifically for push-pull operation only
- Internally matched input and output for simplified circuit design
- Integrated electrostatic discharge (ESD) protection
- Qualified for operation up to a maximum of 32 VDD
Applications
- Broadband commercial applications
- Industrial applications
- Large-signal common-source amplifier applications in base station equipment
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging details. The datasheet indicates that the R3 suffix corresponds to tape and reel packaging containing 250 units per 56 mm reel. Ensure compatibility with the NI-860C3 case style during integration.
Selection Notes
Select this component for high-power RF amplification requiring robust ruggedness and wide instantaneous bandwidth. It is optimized for 28-volt base station environments and offers lower memory effects. Verify thermal management capabilities as continuous use at maximum temperatures affects mean time to failure.
Part Context
This part belongs to the MRF6P9220H series of RF power field effect transistors manufactured by Freescale Semiconductor. The device utilizes lateral N-channel technology suitable for demanding RF environments. It is characterized using series equivalent large-signal impedance parameters for accurate modeling.
Replacement Considerations
The MRF6P9220HR3 has been replaced by the MRFE6P9220HR3. Refer to Device Migration PCN12895 for detailed transition information and updated specifications.
FAQ
Can the MRF6P9220HR5 be used in a single-ended configuration?
No, the device is designed for push-pull operation only.
What is the maximum drain-source voltage rating?
The maximum drain-source voltage (VDSS) is rated from -0.5 to +68 Vdc.
How is the device packaged?
The device is housed in the NI-860C3 package, which corresponds to Case 375G-04 Style 1.
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