MRF6S18060NR1

Overview

The MRF6S18060NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for GSM and GSM EDGE base station applications operating between 1800 MHz and 2000 MHz. It delivers 60 Watts CW output power at 26 Vdc with a typical drain efficiency of 50% and power gain of 15 dB. For GSM EDGE, it provides 25 Watts average output power with 15.5 dB gain and 2% rms EVM. The device features internal input and output matching, qualified up to 32 Vdc operation, integrated ESD protection, and lead-free terminations compliant with RoHS standards.

Feature Summary

• Internally matched on both input and output ports to simplify circuit design
• Qualified for continuous operation up to 32 Vdc drain voltage
• Integrated electrostatic discharge (ESD) protection mechanisms
• Capable of handling high VSWR conditions without failure

Applications

• GSM base station amplifier stages
• GSM EDGE base station amplifier stages
• TDMA cellular radio amplifiers
• CDMA multicarrier amplifier applications

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm package style and reel specifications. Confirm that the component meets all applicable environmental compliance requirements relevant to your target market before finalizing procurement orders.

Selection Notes

Select this component when designing broadband RF power amplifiers for the 1800-2000 MHz frequency range. Ensure the thermal management system can maintain junction temperatures within specified limits during continuous wave operation. Verify that the biasing network supports the required quiescent current levels for optimal linearity and efficiency.

Part Context

This part belongs to the Freescale Semiconductor lateral N-channel RF power MOSFET family. It is specifically engineered for wireless communication infrastructure requiring high linearity and power density in plastic packages.

Replacement Considerations

Consult official manufacturer substitution lists for verified alternatives. Do not assume pin-compatible replacements from other manufacturers without verifying electrical parameters and thermal characteristics.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225°C.

Is the device internally matched?

Yes, the MRF6S18060NR1 is internally matched on both the input and output ports.

Can the device operate at voltages higher than 26 Vdc?

Yes, the device is qualified for operation up to a maximum of 32 Vdc.