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The MRF6S18140HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for N-CDMA base station applications operating between 1805 and 1880 MHz. It supports TDMA, CDMA, and multicarrier amplifier functions in Class AB configurations. The device delivers 29 Watts average output power at 28 Volts with a typical power gain of 16 dB and drain efficiency of 27.5%. It features internal matching, ESD protection, and qualified operation up to 32 Vdc.
Verify the specific suffix against official documentation, as the provided datasheet references HR3 and HSR3 variants. Confirm RoHS compliance status and package type (NI-880 or NI-880S) corresponding to the exact ordering code. Ensure availability through authorized channels given the archived manufacturing status.
Select this component for designs requiring high linearity and efficiency in the PCS/cellular frequency range. Validate thermal management capabilities against the specified junction temperature limits. Ensure biasing circuits accommodate the required quiescent current and gate threshold voltage characteristics for stable Class AB operation.
This lateral N-channel RF power MOSFET belongs to the Freescale Semiconductor MRF6S series. It is specifically engineered for wireless communication infrastructure. The device utilizes silicon technology optimized for high-power density and robust performance in demanding mobile network environments.
Consult official substitution lists for equivalent devices. Verify that any replacement matches the electrical parameters, pinout configuration, and thermal resistance specifications to ensure compatibility with existing board layouts and performance requirements.