MRF6S18140HR5

MRF6S18140HR5

$95.73
  • Description:RF MOSFET LDMOS 28V NI880
  • Series:-

SKU:0813999e3ae1 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI880
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1.88GHz
  • Gain:16dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.2 A
  • Power - Output:29W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:NI-880
  • Supplier Device Package:NI-880
  • Configuration:-

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MRF6S18140HR5

Overview

The MRF6S18140HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for N-CDMA base station applications operating between 1805 and 1880 MHz. It supports TDMA, CDMA, and multicarrier amplifier functions in Class AB configurations. The device delivers 29 Watts average output power at 28 Volts with a typical power gain of 16 dB and drain efficiency of 27.5%. It features internal matching, ESD protection, and qualified operation up to 32 Vdc.

Feature Summary

  • Internally matched input and output networks for simplified circuit integration
  • Integrated electrostatic discharge (ESD) protection mechanisms
  • Qualified for continuous operation at maximum 32 Vdc supply voltage
  • Designed to minimize memory effects and support wide instantaneous bandwidth

Applications

  • N-CDMA base station amplifiers
  • TDMA cellular radio amplifiers
  • Wireless Local Loop (WLL) applications

Procurement Notes

Verify the specific suffix against official documentation, as the provided datasheet references HR3 and HSR3 variants. Confirm RoHS compliance status and package type (NI-880 or NI-880S) corresponding to the exact ordering code. Ensure availability through authorized channels given the archived manufacturing status.

Selection Notes

Select this component for designs requiring high linearity and efficiency in the PCS/cellular frequency range. Validate thermal management capabilities against the specified junction temperature limits. Ensure biasing circuits accommodate the required quiescent current and gate threshold voltage characteristics for stable Class AB operation.

Part Context

This lateral N-channel RF power MOSFET belongs to the Freescale Semiconductor MRF6S series. It is specifically engineered for wireless communication infrastructure. The device utilizes silicon technology optimized for high-power density and robust performance in demanding mobile network environments.

Replacement Considerations

Consult official substitution lists for equivalent devices. Verify that any replacement matches the electrical parameters, pinout configuration, and thermal resistance specifications to ensure compatibility with existing board layouts and performance requirements.

MRF6S18140HR5MRF6S18140HR5
$95.73
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