MRF6S19100NR1

MRF6S19100NR1

$36.52
  • Description:RF MOSFET LDMOS 28V TO270-4
  • Series:-

SKU:c8e96b36a7b2 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V TO270-4
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:1.99GHz
  • Gain:14.5dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:950 mA
  • Power - Output:22W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Package / Case:TO-270AB
  • Supplier Device Package:TO-270 WB-4
  • Configuration:-

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MRF6S19100NR1

Overview

The MRF6S19100NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for base station applications in the 1930 to 1990 MHz frequency range. It delivers 22 Watts average output power at 28 Volts with a typical power gain of 14.5 dB and drain efficiency of 25.5%. The device features integrated ESD protection, internal matching, and qualified operation up to 32 Vdc. It supports Class AB amplification for PCN/PCS/cellular radio and WLL systems.

Feature Summary

  • Internally matched input and output networks for simplified circuit design
  • Integrated electrostatic discharge (ESD) protection mechanisms
  • Qualified for continuous operation at maximum 32 Vdc drain voltage
  • Lead-free terminations compliant with RoHS standards

Applications

  • 2-carrier N-CDMA base station amplifiers
  • TDMA and multicarrier amplifier applications
  • PCN/PCS cellular radio systems
  • Wireless Local Loop (WLL) applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package integrity upon receipt as moisture sensitivity level is rated at 3. Check datasheet revision history for any updates regarding thermal measurement methodology or solder reflow attachment methods before finalizing procurement specifications.

Selection Notes

Select this component for broadband RF power amplification requiring high linearity and wide instantaneous bandwidth. Ensure thermal management capabilities support junction temperatures up to 225°C. Validate impedance matching networks against provided series equivalent large-signal impedance parameters for optimal performance within the specified frequency band.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors family. It is specifically engineered for N-CDMA base station environments. The device utilizes Lateral MOSFET technology optimized for lower memory effects. It represents a specialized solution for wireless communication infrastructure requiring robust RF performance.

Replacement Considerations

MRF6S19100NBR1 serves as a verified substitute offering identical electrical characteristics and functionality. Both variants share the same technical specifications and application suitability. Verify pinout compatibility and mounting requirements when transitioning between tape-and-reel packaging options.

MRF6S19100NR1MRF6S19100NR1
$36.52
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