MRF6S19140HSR5

Overview

The MRF6S19140HSR5 is an N-channel enhancement-mode Lateral Diffusion Metal Oxide Semiconductor Field Effect Transistor (LDMOS FET) manufactured by Freescale Semiconductor. Designed for RF power amplification, this component operates within the S-band frequency range with a center frequency of 1.914 GHz. It features a maximum drain-source breakdown voltage of 68 V and is typically tested at a supply voltage of 28 V. The device delivers a typical output power of 40 W in a single-carrier Wideband Code Division Multiple Access (W-CDMA) configuration. Packaged in the NI-780S surface-mount format, it is optimized for base station applications requiring high linearity and efficiency.

Feature Summary

• Utilizes LDMOS technology to provide robust performance in high-frequency RF power amplification environments.
• Engineered specifically for cellular base station architectures supporting multi-carrier amplifier topologies.
• Features a surface-mount package design intended to facilitate automated assembly and thermal management.

Applications

• N-CDMA base station power amplifiers
• W-CDMA cellular radio systems
• TDMA and CDMA multicarrier amplifier applications

Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical characteristics and packaging specifications. Confirm RoHS compliance status and environmental certifications prior to integration. Ensure that the sourcing channel provides valid traceability for this discontinued or legacy component series. Cross-reference datasheet revisions to validate pinout compatibility and thermal resistance parameters for your specific circuit design requirements.

Selection Notes

Select this component when designing S-band power amplifiers for cellular infrastructure requiring high linearity under multi-carrier conditions. Evaluate the trade-off between output power capabilities and gain stability at 1.914 GHz. Consider the NI-780S package constraints regarding PCB layout and thermal dissipation paths. Ensure the biasing network supports the required gate drive and quiescent current settings for optimal Class AB operation.

Part Context

This device belongs to the MRF6S family of RF power transistors developed for wireless communication infrastructure. These components are engineered to meet the stringent linearity and efficiency demands of modern cellular standards. The specific model targets the 1.9 GHz band, serving as a critical active element in transmitter chains for mobile network base stations.

Replacement Considerations

Consult official substitution guides for equivalent part numbers within the same product family. Verify that any alternative device matches the original pinout, thermal characteristics, and electrical performance envelope. Ensure compatibility with existing board layouts and biasing circuits before implementing a replacement.

FAQ

What is the primary operating frequency for this transistor?

The device is designed for operation at 1.914 GHz, which falls within the S-band spectrum used for cellular communications.

Is this component suitable for multi-carrier applications?

Yes, the datasheet specifies suitability for TDMA, CDMA, and multicarrier amplifier applications in base station environments.

What type of semiconductor technology is used?

It utilizes N-channel enhancement-mode Lateral Diffusion Metal Oxide Semiconductor (LDMOS) technology.