MRF6S19200HR5

MRF6S19200HR5

$117.13
  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-

SKU:875a3a88164b Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:1.93GHz ~ 1.99GHz
  • Gain:17.9dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:1.6 A
  • Power - Output:56W
  • Voltage - Rated:66 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-957A
  • Supplier Device Package:NI-780H-2L
  • Configuration:-

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MRF6S19200HR5

Overview

The MRF6S19200HR5 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It supports Class AB and Class C operation for PCN-PCS/cellular radio amplifiers. The device delivers 56 Watts average output power with a typical gain of 17.9 dB and drain efficiency of 29.5% under single-carrier W-CDMA conditions at 28 Volts. It features internal matching, ESD protection, and RoHS compliance.

Feature Summary

  • Internally matched input and output networks to simplify circuit design
  • Integrated electrostatic discharge (ESD) protection mechanisms
  • Optimized specifically for Doherty amplifier configurations
  • Extended negative gate-source voltage range for improved Class C performance

Applications

  • CDMA base station power amplification
  • Multicarrier amplifier applications
  • PCN-PCS cellular radio systems
  • Class AB and Class C RF power stages

Procurement Notes

Verify the specific suffix HR5 against official documentation to confirm packaging details. Standard suffixes like R3 indicate tape and reel quantities. Confirm RoHS compliance status and current manufacturing availability directly with the supplier or manufacturer before procurement.

Selection Notes

Select this component for high-power linear amplification in the PCS band. Ensure thermal management supports junction temperatures up to 225°C. Validate impedance matching networks using provided series equivalent large-signal impedance parameters for optimal performance across the 1930-1990 MHz bandwidth.

Part Context

This part belongs to the MRF6S family of RF power LDMOS transistors from Freescale Semiconductor. These devices are engineered for robust performance in wireless infrastructure. The NI-780 package provides reliable thermal dissipation for high-power density applications in cellular communication systems.

Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific impedance characteristics or thermal requirements of the original design.

MRF6S19200HR5MRF6S19200HR5
$117.13
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