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The MRF6S19200HR5 is an N-channel enhancement-mode lateral MOSFET designed for CDMA base station applications operating between 1930 and 1990 MHz. It supports Class AB and Class C operation for PCN-PCS/cellular radio amplifiers. The device delivers 56 Watts average output power with a typical gain of 17.9 dB and drain efficiency of 29.5% under single-carrier W-CDMA conditions at 28 Volts. It features internal matching, ESD protection, and RoHS compliance.
Verify the specific suffix HR5 against official documentation to confirm packaging details. Standard suffixes like R3 indicate tape and reel quantities. Confirm RoHS compliance status and current manufacturing availability directly with the supplier or manufacturer before procurement.
Select this component for high-power linear amplification in the PCS band. Ensure thermal management supports junction temperatures up to 225°C. Validate impedance matching networks using provided series equivalent large-signal impedance parameters for optimal performance across the 1930-1990 MHz bandwidth.
This part belongs to the MRF6S family of RF power LDMOS transistors from Freescale Semiconductor. These devices are engineered for robust performance in wireless infrastructure. The NI-780 package provides reliable thermal dissipation for high-power density applications in cellular communication systems.
Consult official substitution lists for verified equivalents. Generic replacements may not match the specific impedance characteristics or thermal requirements of the original design.