MRF6S20010NR1

Overview

The MRF6S20010NR1 is an RF MOSFET LDMOS device manufactured by NXP USA Inc. It operates within the frequency range of 2.11 GHz to 2.16 GHz with a rated voltage of 28 V and a maximum rating of 68 V. The component delivers an output power of 23 W and provides a gain of 14.5 dB at a test current of 1.05 A. Packaged in a TO-270 WB-4 surface mount configuration, this part is classified as discontinued status as of July 1, 2010.

Feature Summary

• Utilizes LDMOS technology for RF applications
• Designed for surface mount installation

Applications

• RF power amplification in communication systems

Procurement Notes

Verify availability carefully as the MRF6S20010NR1 is officially listed as discontinued by NXP USA Inc. with a discontinuation date of July 1, 2010. Confirm if existing stock or alternative sourcing channels are viable for production needs. Check RoHS compliance status which indicates conformity to ROHS3 specifications. Ensure design-in decisions account for the end-of-life status to prevent future supply chain disruptions.

Selection Notes

Select this component only if legacy support for the 2.11–2.16 GHz band is required and surface-mount TO-270 packaging fits the board layout. Consider that the device is discontinued; verify if newer NXP RF LDMOS transistors offer equivalent 28 V operation and similar gain characteristics for new designs. Evaluate thermal management requirements for the 23 W output capability in the specified package.

Part Context

This device belongs to the MRF6 series of RF power transistors from NXP. These components are typically used in base station and wireless infrastructure applications requiring high linearity and efficiency. The specific model targets cellular bands around 2.1 GHz, serving as a building block for power amplifier modules in mobile communication networks.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.