MRF6S21050LR3

Description：RF MOSFET LDMOS 28V NI400
Series：-

SKU:f36ebd34f290 Category: RF FETs, MOSFETs Brand: NXP USA Inc.

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Product introduction

Product Detailed Parameters

Description：RF MOSFET LDMOS 28V NI400
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR)
Technology：LDMOS
Frequency：2.16GHz
Gain：16dB
Voltage - Test：28 V
Current Rating (Amps)：-
Noise Figure：-
Current - Test：450 mA
Power - Output：11.5W
Voltage - Rated：68 V
Grade：-
Qualification：-
Mounting Type：Chassis Mount
Package / Case：NI-400
Supplier Device Package：NI-400
Configuration：-

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MRF6S21050LR3

Overview

The MRF6S21050LR3 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers 11.5 Watts average output power at 28 Volts with a drain efficiency of 27.7%. The device features internal matching, ESD protection, and supports up to 32 VDD operation.

Feature Summary

Internally matched input and output networks for simplified circuit design
Integrated electrostatic discharge (ESD) protection mechanisms
Qualified for maximum 32 VDD operation capability

Applications

W-CDMA base station amplifiers
TDMA and CDMA amplifier applications
Multicarrier amplifier designs
PCS/cellular radio systems
Wireless Local Loop (WLL) applications

Procurement Notes

Verify the specific ordering suffix against current manufacturer documentation to confirm package type and reel specifications. Confirm RoHS compliance status and check for any product change notifications or lifecycle updates that may affect availability or manufacturing origin before finalizing procurement plans.

Selection Notes

Select this component for broadband RF power amplification in cellular infrastructure. Ensure thermal management meets the junction-to-case resistance requirements. Validate impedance matching networks using the provided series equivalent large-signal impedance parameters for optimal performance across the specified frequency range.

Part Context

This part belongs to the Freescale Semiconductor RF Power Field Effect Transistors family. It is specifically engineered as an LDMOS device for high-linearity wireless communication applications. The datasheet provides detailed electrical characteristics and test circuit schematics for system integration.