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The MRF6S21050LR5 is an LDMOS RF power transistor manufactured by Freescale Semiconductor, housed in a NI-400 package. It operates within the 2110 to 2170 MHz frequency range with a rated voltage of 28 V and a test current of 450 mA. The device delivers an average output power of 11.5 W and provides a gain of 16 dB. Designed for robust performance in base station environments, it supports multi-carrier amplifier applications.
Verify component authenticity through official manufacturer channels or authorized distributors. Confirm that the specific part number matches the required NI-400 package and LDMOS technology specifications. Ensure compliance with RoHS3 standards and check for any relevant export control classifications such as EAR99 before finalizing acquisition orders.
Select this component for applications requiring stable RF performance in the 2110-2170 MHz band. Consider its 11.5 W output capability and 16 dB gain when designing amplifier stages. Evaluate thermal management requirements due to the NI-400 package constraints and ensure compatibility with 28 V supply voltages typical in base station equipment.
This device belongs to the MRF6S series of RF transistors from Freescale Semiconductor, now NXP Semiconductors. The series targets wireless communication infrastructure, providing reliable amplification solutions for cellular networks. The MRF6S21050LR5 variant specifically addresses the needs of modern base stations operating in the 2100 MHz spectrum range.
Consult official datasheets for direct substitutes within the MRF6S family. Verify pinout compatibility and electrical parameter alignment before swapping components. Generic replacements may not match the specific gain or power output requirements of the original design.