MRF6S21100HSR3

Overview

The MRF6S21100HSR3 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers 23 watts average output power at a drain voltage of 28 volts with a quiescent current of 950 mA. The device features a gain of 15.9 dB, drain efficiency of 27.6%, and IM3 of -37 dBc in a 3.84 MHz channel bandwidth. It utilizes the NI-780S surface-mount package.

Feature Summary

• Internally matched input and output networks to simplify circuit design
• Integrated electrostatic discharge protection mechanisms
• Qualified for operation up to a maximum drain voltage of 32 volts
• Optimized for reduced memory effects and wide instantaneous bandwidth

Applications

• W-CDMA base station amplifiers
• TD-SCDMA cellular radio systems
• PCN-PCS and wireless local loop (WLL) applications
• Multicarrier amplifier designs

Procurement Notes

Verify the specific suffix SR3 indicates tape and reel packaging containing 250 units per 56 mm reel. Confirm the component meets RoHS compliance standards before integration. Ensure the NI-780S footprint matches the PCB layout requirements. Validate thermal management capabilities against the specified junction-to-case resistance values during system design.

Selection Notes

Select this component for high-efficiency linear amplification in dual-carrier W-CDMA environments. The internal matching reduces external component count and simplifies impedance transformation networks. Consider the 28-volt nominal operating point and verify that the thermal resistance allows adequate heat dissipation within the target enclosure constraints.

Part Context

This device belongs to the MRF6S series of RF power field-effect transistors manufactured by Freescale Semiconductor. The series targets broadband cellular infrastructure requiring robust linearity and high power density. The NI-780S package variant provides a standardized mounting interface for automated assembly processes in modern manufacturing facilities.

Replacement Considerations

MRF6S21100HR3

FAQ

What is the typical third-order intermodulation distortion performance?

The device achieves an IM3 level of -37 dBc measured at a 10 MHz offset within a 3.84 MHz channel bandwidth.

Is the device suitable for TD-SCDMA applications?

Yes, the datasheet explicitly characterizes the transistor for use in TD-SCDMA systems alongside W-CDMA and CDMA applications.

How does the internal matching benefit the design process?

Internal matching on both input and output ports eliminates the need for external discrete matching networks, reducing board space and simplifying the overall amplifier topology.