MRF6S21100NBR1

Overview

The MRF6S21100NBR1 is an N-channel enhancement-mode Lateral Diffused Metal Oxide Semiconductor (LDMOS) RF power transistor manufactured by Freescale Semiconductor. Designed for base station applications, it operates within the frequency range of 1930 to 1990 MHz. The device typically delivers 12 Watts of average output power at a drain voltage of 28 Volts and quiescent current of 610 mA under CDMA conditions. It utilizes a TO-270 WB-4 surface-mount package.

Feature Summary

• Engineered specifically for N-CDMA base station amplifier applications
• Capable of supporting TDMA, CDMA, and multicarrier amplifier configurations
• Suitable for Class AB operation in PCS/cellular radio systems

Applications

• N-CDMA base station amplifiers
• TDMA amplifier stages
• Multicarrier amplifier designs
• PCS/cellular radio transmitters

Procurement Notes

Verify component authenticity through authorized distribution channels or direct manufacturer verification. Confirm RoHS compliance status and specific revision markings against official datasheets. Ensure storage conditions adhere to moisture sensitivity level requirements prior to assembly to prevent package damage during soldering processes.

Selection Notes

Select this component for wireless infrastructure requiring stable performance in the 1930-1990 MHz band. Evaluate thermal management capabilities due to the 12W output power density. Ensure bias circuits support the specified 28V drain voltage and 610mA quiescent current for optimal linearity and efficiency in Class AB operation.

Part Context

This part belongs to the MRF6S series of RF power LDMOS transistors developed for cellular communication infrastructure. It represents a specialized solution for high-linearity amplification in mobile network base stations, distinct from general-purpose RF switches or low-noise amplifiers used in consumer electronics.

Replacement Considerations

Public confirmed substitute part numbers are not available.