MRF6S21140HR5

Overview

The MRF6S21140HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for W-CDMA base station applications operating between 2110 and 2170 MHz. It delivers 30 Watts average output power at 28 Volts with a typical power gain of 15.5 dB and drain efficiency of 27.5%. The device features internal matching, ESD protection, and RoHS compliance.

Feature Summary

• Optimized for Doherty amplifier configurations
• Internally matched input and output circuits
• Integrated electrostatic discharge (ESD) protection
• Qualified for operation up to 32 Vdc

Applications

• W-CDMA base station amplifiers
• TDMA and CDMA amplifier stages
• Multicarrier amplifier applications
• PCN-PCS/cellular radio systems
• Wireless Local Loop (WLL) applications

Procurement Notes

Verify the exact ordering suffix against official documentation, as standard variants include HR3 and HSR3. Confirm current availability status directly with NXP USA Inc., as this component may be subject to discontinuation or lifecycle changes. Ensure procurement channels provide valid traceability and authenticity certificates.

Selection Notes

Select this component for designs requiring high linearity in Class AB operation. Verify thermal management capabilities to maintain junction temperatures within the specified 225 °C limit. Ensure the application supports the required 28 Vdc supply voltage and accounts for the specific NI-880 package dimensions.

Part Context

This part belongs to the MRF6S series of RF Power Field Effect Transistors manufactured by Freescale Semiconductor (now NXP). These devices are specifically engineered for cellular infrastructure, providing robust performance in high-power wireless communication environments.

Replacement Considerations

Consult official documentation for direct substitutes such as MRF6S21140HR3 or MRF6S21140HSR3. Verify pinout compatibility and electrical specifications before implementation.

FAQ

What is the maximum drain-source voltage rating?

The maximum Drain-Source Voltage (VDSS) rating is +68 Vdc.

Is the device suitable for pulsed CW applications?

Yes, the datasheet provides data for Pulsed CW Output Power versus Input Power at 2140 MHz.

What is the typical third-order intermodulation distortion (IM3)?

The typical IM3 is -37 dBc measured at a 10 MHz offset in a 3.84 MHz channel bandwidth.