MRF6S21190HSR3

Overview

The MRF6S21190HSR3 is an N-channel enhancement-mode lateral MOSFET designed for W-CDMA base station applications in the 2110 to 2170 MHz frequency range. It operates at a drain-source voltage of 28 Vdc and delivers 54 Watts average output power with 16 dB gain and 29% drain efficiency under single-carrier W-CDMA conditions. The device features integrated ESD protection, internal matching, and is RoHS compliant.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Integrated electrostatic discharge (ESD) protection mechanisms
• Optimized for digital predistortion error correction systems
• Designed to minimize memory effects and support wide instantaneous bandwidth

Applications

• W-CDMA base station amplifiers
• TDMA and CDMA amplifier applications
• Multicarrier amplifier designs
• PCS/cellular radio and wireless local loop (WLL) applications

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm package integrity upon receipt as the device utilizes sensitive ceramic construction. Ensure proper handling protocols are followed due to the presence of integrated ESD protection structures. Validate that the specific suffix matches the required reel packaging configuration before integration into manufacturing processes.

Selection Notes

Select this component for high-linearity RF power amplification requiring low intermodulation distortion. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance values. Consider the device's capability to handle high VSWR conditions when designing output matching networks. Verify compatibility with digital predistortion algorithms to maximize system performance.

Part Context

This part belongs to the MRF6S series of lateral N-channel RF power MOSFETs manufactured by Freescale Semiconductor, now NXP USA Inc. The series targets cellular infrastructure markets with optimized linearity and efficiency characteristics. The NI-880S package provides robust mechanical stability for high-power density applications.

Replacement Considerations

Consult official documentation for verified substitute part numbers. Cross-referencing requires matching electrical parameters and physical footprint specifications.