MRF6S23100HR3

Overview

The MRF6S23100HR3 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 2300 and 2400 MHz. It supports WiMAX, WiBro, and multicarrier amplifier uses in Class AB and C configurations. Typical performance at 28 Volts and 1000 mA quiescent current includes 20 Watts average output power with 15.4 dB gain and 23.5% drain efficiency. The device features integrated ESD protection and is qualified for up to 32 VDD operation.

Feature Summary

• Internally matched input and output networks for simplified circuit design
• Characterized using series equivalent large-signal impedance parameters
• Integrated electrostatic discharge (ESD) protection mechanisms
• Designed to minimize memory effects and support wide instantaneous bandwidth

Applications

• CDMA base station amplifiers
• WiMAX and WiBro systems
• Multicarrier amplifier applications
• Wireless Local Loop (WLL) transmitters

Procurement Notes

Verify the specific suffix against official documentation to confirm packaging details. The R3 suffix indicates tape and reel packaging containing 250 units per 56 mm reel. Confirm RoHS compliance status and ensure the sourcing channel provides valid manufacturer traceability for this discontinued component family.

Selection Notes

Select this component for designs requiring internal matching to reduce external passive components. Ensure the thermal management system maintains the junction temperature within specified limits to preserve Mean Time To Failure ratings. Validate that the bias network supports the required quiescent current for the target linearity specifications.

Part Context

This part belongs to the MRF6S23100H lateral N-channel RF power MOSFET family manufactured by Freescale Semiconductor, now NXP USA Inc. It utilizes a NI-780 package style. The device is optimized for high-efficiency linear amplification in wireless communication infrastructure.

Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and thermal resistance characteristics before integrating any cross-reference parts into existing board layouts.

FAQ

What is the maximum drain-source voltage rating?

The absolute maximum Drain-Source Voltage (VDSS) rating is +68 Vdc.

How is the device protected against electrostatic discharge?

The MRF6S23100HR3 includes integrated ESD protection rated at minimum Human Body Model Class 3A and Charge Device Model Class IV.

What is the typical power gain at 2390 MHz?

Under standard test conditions of 28 Volts and 1000 mA quiescent current, the typical power gain is 15.4 dB.