MRF6S23100HR5

Overview

The MRF6S23100HR5 is an N-Channel Enhancement-Mode Lateral MOSFET designed for CDMA base station applications operating between 2300 and 2400 MHz. It supports Class AB and Class C configurations for WLL, WiMAX, and multicarrier amplifiers. The device delivers a typical average output power of 20 Watts at 28 Volts with a drain efficiency of 23.5% and power gain of 15.4 dB. It withstands up to 68 Vdc drain-source voltage and operates at junction temperatures reaching 225 °C.

Feature Summary

• Internally matched input and output networks for simplified circuit integration
• Integrated electrostatic discharge protection mechanisms
• Qualified for operation up to a maximum of 32 Vdc drain supply
• Designed to minimize memory effects and support wide instantaneous bandwidth

Applications

• CDMA base station amplifier stages
• WiMAX and WiBro system transmitters
• Multicarrier amplifier applications
• Wireless Local Loop (WLL) systems in Class AB or Class C modes

Procurement Notes

Verify the specific suffix against official documentation, as standard variants include HR3 and HSR3. Confirm RoHS compliance status and check current manufacturing lifecycle status directly with NXP Semiconductors or authorized distributors before procurement planning.

Selection Notes

Evaluate thermal resistance characteristics relative to the intended case temperature and continuous wave output requirements. Ensure the bias network accommodates the specified gate threshold voltage and quiescent current levels. Verify that the load impedance matches the series equivalent parameters provided in the datasheet for optimal performance.

Part Context

This component belongs to the MRF6S23100H family of RF Power LDMOS Transistors manufactured by Freescale Semiconductor, now part of NXP Semiconductors. These devices are engineered specifically for high-efficiency linear amplification in cellular infrastructure environments requiring robust linearity and power handling capabilities.

Replacement Considerations

Consult official cross-reference lists from NXP Semiconductors for verified substitutes. Do not assume functional equivalence with other MRF6 series parts without validating electrical parameters and pinout compatibility through manufacturer documentation.

FAQ

What is the maximum operating junction temperature?

The maximum operating junction temperature is 225 °C.

Is the device internally matched?

Yes, the MRF6S23100HR5 features internal matching on both the input and output ports.

What is the typical power gain at 2390 MHz?

The typical power gain is 15.4 dB under standard two-carrier W-CDMA test conditions.