MRF6S27015NR1

Overview

The MRF6S27015NR1 is an N-channel enhancement-mode lateral RF power MOSFET designed for high-frequency applications. It operates within the 2300 MHz to 2700 MHz frequency range, delivering 3 watts of average output power. The device requires a drain voltage of 28 V and features a gain of 14 dB. Packaged in a TO-270-2 (TO-270AA) housing, it supports S-band operations with specific breakdown voltages including 28 V and 68 V ratings.

Feature Summary

• N-channel enhancement-mode lateral structure optimized for RF power amplification
• Designed for single W-CDMA and similar high-frequency communication systems
• Housed in a TO-270-2 package suitable for surface-mount thermal management

Applications

• Single W-CDMA base station power amplifiers
• S-band RF power amplifier modules
• High-frequency communication system transmitters

Procurement Notes

Verify the manufacturer origin, as this component was originally developed by Freescale Semiconductor and is now distributed under NXP Semiconductors. Confirm the RoHS compliance status, as some sources indicate potential incompatibility or lead-containing variants. Ensure the package type matches the required TO-270-2 footprint for proper integration into the target circuit board design.

Selection Notes

Select this component when designing for the 2.3–2.7 GHz band requiring approximately 3W of average power output. The 28V drain supply requirement must be accommodated in the power stage design. Consider the TO-270-2 package for its thermal performance in S-band applications. Verify that the 14dB gain meets the system's linearity and efficiency targets without excessive external biasing complexity.

Part Context

This part belongs to the MRF6S series of lateral RF power MOSFETs from Freescale/NXP. These devices are engineered specifically for cellular infrastructure and wireless communication equipment. The MRF6S27015NR1 represents a solution for mid-power S-band applications, bridging the gap between low-power discrete devices and higher-power modules used in macro-cellular base stations.

Replacement Considerations

The MRF6S9125N is identified as a comparable industry-standard transistor from NXP Semiconductor. Both parts serve as lateral RF power MOSFETs. Engineers should verify pin compatibility and electrical parameter alignment before substituting one for the other in existing designs.