MRF6S27050HR5

MRF6S27050HR5

$51.57
  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-

SKU:18f21b64e62e Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V NI780
  • Series:-
  • Mfr:Freescale Semiconductor
  • Package:Bulk
  • Technology:LDMOS
  • Frequency:2.62GHz
  • Gain:16dB
  • Voltage - Test:28 V
  • Current Rating (Amps):-
  • Noise Figure:-
  • Current - Test:500 mA
  • Power - Output:7W
  • Voltage - Rated:68 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:SOT-957A
  • Supplier Device Package:NI-780H-2L
  • Configuration:-

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MRF6S27050HR5

Overview

The MRF6S27050HR5 is an N-Channel Enhancement-Mode Lateral MOSFET RF power transistor designed for CDMA base station applications operating between 2500 and 2700 MHz. It supports WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier configurations. The device features internal matching for input and output to simplify circuit design. Maximum ratings include a drain-source voltage of 68 Vdc and an operating junction temperature up to 225 °C. Electrical characteristics specify a typical power gain of 16 dB and a drain efficiency of 22.5% under single-carrier W-CDMA test conditions at 28 Vdc.

Feature Summary

  • Internally matched on both input and output ports to facilitate ease of use in RF designs
  • Integrated electrostatic discharge (ESD) protection mechanisms
  • Qualified for operation with a maximum drain supply voltage of 32 Vdc
  • Engineered to minimize memory effects and support wide instantaneous bandwidth

Applications

  • CDMA base station amplifiers
  • WiMAX and WiBro systems
  • OFDM multicarrier Class AB and Class C amplifiers

Procurement Notes

Verify the exact ordering suffix against official manufacturer documentation before procurement. Suffixes such as R3 or SR3 indicate specific reel packaging quantities and may differ from the requested model. Confirm RoHS compliance status and package style directly with the supplier to ensure alignment with project requirements.

Selection Notes

Select this component for broadband RF applications requiring high linearity and efficiency within the 2500 to 2700 MHz range. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values. Validate impedance parameters using the provided series equivalent large-signal data for accurate matching network design.

Part Context

This lateral N-channel RF power MOSFET belongs to Freescale Semiconductor's portfolio of devices optimized for wireless communication infrastructure. It serves as a critical active element in power amplifier stages where signal integrity and spectral purity are paramount for modern cellular and broadband standards.

Replacement Considerations

Consult official cross-reference lists for verified substitutes. No confirmed substitute part numbers are available in the provided source material.

MRF6S27050HR5MRF6S27050HR5
$51.57
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