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The MRF6S27050HR5 is an N-Channel Enhancement-Mode Lateral MOSFET RF power transistor designed for CDMA base station applications operating between 2500 and 2700 MHz. It supports WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier configurations. The device features internal matching for input and output to simplify circuit design. Maximum ratings include a drain-source voltage of 68 Vdc and an operating junction temperature up to 225 °C. Electrical characteristics specify a typical power gain of 16 dB and a drain efficiency of 22.5% under single-carrier W-CDMA test conditions at 28 Vdc.
Verify the exact ordering suffix against official manufacturer documentation before procurement. Suffixes such as R3 or SR3 indicate specific reel packaging quantities and may differ from the requested model. Confirm RoHS compliance status and package style directly with the supplier to ensure alignment with project requirements.
Select this component for broadband RF applications requiring high linearity and efficiency within the 2500 to 2700 MHz range. Ensure thermal management solutions accommodate the specified junction-to-case thermal resistance values. Validate impedance parameters using the provided series equivalent large-signal data for accurate matching network design.
This lateral N-channel RF power MOSFET belongs to Freescale Semiconductor's portfolio of devices optimized for wireless communication infrastructure. It serves as a critical active element in power amplifier stages where signal integrity and spectral purity are paramount for modern cellular and broadband standards.
Consult official cross-reference lists for verified substitutes. No confirmed substitute part numbers are available in the provided source material.