MRF6S9045NR1

Overview

The MRF6S9045NR1 is an N-Channel Enhancement-Mode Lateral MOSFET designed for broadband commercial and industrial applications up to 1000 MHz. It operates at a drain-source voltage of 68 Vdc with a typical power gain of 22.7 dB at 880 MHz. The device delivers 10 Watts average output power in single-carrier N-CDMA configurations and supports 45 Watts CW output power within the 921-960 MHz band. It features integrated ESD protection, lead-free terminations, and a junction temperature capability of 225°C.

Feature Summary

• Broadband RF performance optimized for frequencies up to 1000 MHz
• Integrated electrostatic discharge (ESD) protection mechanisms
• High thermal stability with a 225°C capable plastic package
• Lead-free termination compliant with RoHS standards

Applications

• Large-signal common-source amplifier applications in 28 volt base station equipment
• Single-carrier N-CDMA signal amplification
• GSM EDGE application signal processing
• Standard GSM application signal amplification

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm that the specific ordering suffix matches the required package type, as the R1 suffix indicates tape and reel packaging. Ensure compliance with environmental regulations by checking for lead-free termination markings on the physical device. Validate all electrical parameters against the official datasheet before integration into final designs.

Selection Notes

Select this component for high-power broadband applications requiring stable performance across wide frequency ranges. Consider the 28 Vdc operating voltage and the requirement for robust thermal management due to the 225°C junction capability. Evaluate impedance matching networks based on the provided series equivalent large-signal impedance parameters. Ensure the design accommodates the TO-270-2 or TO-272-2 surface mount packages.

Part Context

This device belongs to the Freescale Semiconductor RF Power Field Effect Transistor family, specifically designed for LDMOS technology. It serves as a broadband solution for commercial and industrial radio frequency applications. The product line emphasizes high gain and ruggedness, making it suitable for demanding base station environments where reliability and thermal performance are critical.

Replacement Considerations

The MRF6S9045NR1 has been replaced by the MRFE6S9045NR1. Refer to Device Migration PCN12895 for detailed transition information. The variant MRF6S9045NBR1 is no longer manufactured.